MTA2D0P02H8

CYStech Electronics Corp. Spec. No. : C027H8 Issued Date : 2017.11.21 Revised Date : 2018.09.11 Page No. : 1/ 9 P-Channel Enhancement Mode Power MOSFET MTA2D0P02H8 BVDSS ID@VGS=-4.5V, TC=25°C ID@VGS=-4.5V, TA=25°C Features  Single Drive Requirement  Low On-resistance  Fast Switching Characteristic  Pb-free lead plating and Halogen-free package VGS=-4.5V, ID=-20A RDSON(TYP) VGS=-2.5V, ID=-20A -20V -85.5A -27A 2.0mΩ 2.6mΩ Symbol MTA2D0P02H8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTA2D0P02H8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTA2D0P02H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C027H8 Issued Date : 2017.11.21 Revised Date : 2018.09.11 Page No. : 2/ 9 Absolute Maximum Ratings (Ta=25C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25C, VGS=-4.5V (Note1) Continuous Drain Current @ TC=100C, VGS=-4.5V (Note1) Continuous Drain Current @ TC=25C, VGS=-4.5V (Note1) Continuous Drain Current @ TA=25C, VGS=-4.5V (Note2) Continuous Drain Current @ TA=70C, VGS=-4.5V (Note2) Pulsed Drain Current (Note3) Avalanche Current @ L=0.1mH Avalanche Ene...