MTA340N02S3 Power MOSFET Datasheet

MTA340N02S3 Datasheet, PDF, Equivalent


Part Number

MTA340N02S3

Description

N-Channel Enhancement Mode Power MOSFET

Manufacture

CYStech

Total Page 9 Pages
Datasheet
Download MTA340N02S3 Datasheet


MTA340N02S3
CYStech Electronics Corp.
Spec. No. : C915S3
Issued Date : 2017.02.06
Revised Date :
Page No. : 1/9
20V N-Channel Enhancement Mode MOSFET
MTA340N02S3
BVDSS
ID@VGS=4.5V, TA=25°C
RDSON@VGS=4.5V, ID=650mA
RDSON@VGS=2.5V, ID=500mA
RDSON@VGS=1.8V, ID=200mA
20V
0.8A
264mΩ(typ)
325mΩ(typ)
371mΩ(typ)
Features
Simple drive requirement
Small package outline
ESD protected gate
Pb-free lead plating and halogen-free package
Symbol
MTA340N02S3
Outline
SOT-323
D
GGate
SSource
DDrain
S
G
Ordering Information
Device
MTA340N02S3-0-T1-G
Package
Shipping
SOT-323
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTA340N02S3
CYStek Product Specification

MTA340N02S3
CYStech Electronics Corp.
Spec. No. : C915S3
Issued Date : 2017.02.06
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3)
Continuous Drain Current @ TA=70°C, VGS=4.5V (Note 3)
Pulsed Drain Current
(Notes 1, 2)
Maximum Power Dissipation@ TA=25
(Note 3)
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Tj ; Tstg
Limits
20
±12
0.8
0.64
3.2
0.34
-55~+150
Unit
V
A
W
°C
Thermal Performance
Parameter
Symbol
Limit
Thermal Resistance, Junction-to-Ambient, max
(Note3)
RθJA
367
Thermal Resistance, Junction-to-Case, max
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width300μs, duty cycle2%.
RθJC
250
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Unit
°C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Min. Typ. Max. Unit
Test Conditions
20 -
0.45 -
-
1.0
V
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
- - ±10
VGS=±10V, VDS=0V
- - 1 μA VDS=20V, VGS=0V
- - 25
VDS=16V, VGS=0V(Tj=70°C)
- 264 350
VGS=4.5V, ID=650mA
- 325 660 mΩ VGS=2.5V, ID=500mA
- 371 2000
VGS=1.8V, ID=500mA
- 2.4 -
S VDS=5V, ID=1A
- 64 -
- 17 -
- 20 -
- 2.6 -
- 16 -
- 29.8 -
- 11 -
- 1.3 -
- 0.5 -
- 0.1 -
pF VDS=10V, VGS=0V, f=1MHz
ns VDS=10V, ID=0.5A, VGS=10V, RG=1Ω
nC VDS=15V, ID=0.5A, VGS=4.5V
MTA340N02S3
CYStek Product Specification


Features CYStech Electronics Corp. Spec. No. : C 915S3 Issued Date : 2017.02.06 Revised Date : Page No. : 1/9 20V N-Channel En hancement Mode MOSFET MTA340N02S3 BVD SS ID@VGS=4.5V, TA=25°C RDSON@VGS=4.5 V, ID=650mA RDSON@VGS=2.5V, ID=500mA RDSON@VGS=1.8V, ID=200mA 20V 0.8A 264m Ω(typ) 325mΩ(typ) 371mΩ(typ) Featur es • Simple drive requirement • Sma ll package outline • ESD protected ga te • Pb-free lead plating and halogen -free package Symbol MTA340N02S3 Outl ine SOT-323 D G:Gate S:Source D Drain S G Ordering Information Devi ce MTA340N02S3-0-T1-G Package Shippin g SOT-323 (Pb-free lead plating and ha logen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S fo r RoHS compliant products, G for RoHS c ompliant and green compound products Pa cking spec, T1 : 3000 pcs / tape & reel ,7” reel Product rank, zero for no ra nk products Product name MTA340N02S3 CYStek Product Specification CYStech E lectronics Corp. Spec. No. : C915S3 Issued Date : 2017.02.06 Revised Date : Page N.
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