MTA3D0N01H8 Power MOSFET Datasheet

MTA3D0N01H8 Datasheet, PDF, Equivalent


Part Number

MTA3D0N01H8

Description

N-Channel Enhancement Mode Power MOSFET

Manufacture

CYStech

Total Page 10 Pages
Datasheet
Download MTA3D0N01H8 Datasheet


MTA3D0N01H8
CYStech Electronics Corp.
Spec. No. : C098H8
Issued Date : 2016.04.18
Revised Date : 2016.04.27
Page No. : 1/10
N-Channel Logic Level Enhancement Mode Power MOSFET
MTA3D0N01H8 BVDSS
ID @ TC=25°C, VGS=4.5V
14V
44.5A
ID @ TA=25°C, VGS=4.5V
15.4A
VGS=10V, ID=20A 2.9mΩ
RDSON(TYP) VGS=4.5V, ID=20A 3.7mΩ
Features
VGS=2.5V, ID=20A 6.2mΩ
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTA3D0N01H8
Outline
Pin 1
DFN5×6
GGate DDrain SSource
Ordering Information
Device
MTA3D0N01H8-0-T6-G
Package
DFN5×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTA3D0N01H8
CYStek Product Specification

MTA3D0N01H8
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=4.5V, TC=25°C
Continuous Drain Current @ VGS=4.5, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=2mH, ID=15A, VDD=10V
TC=25
Total Power Dissipation
TC=100
TA=25
TA=70
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
PD
PDSM
Operating Junction and Storage Temperature Range
Tj, Tstg
Spec. No. : C098H8
Issued Date : 2016.04.18
Revised Date : 2016.04.27
Page No. : 2/10
Limits
14
±10
44.5
28.1
15.4
12.3
248 *1
40
225 *3
21
8.4
2.5 *2
1.6 *2
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Rth,j-c
Rth,j-a
6
50 *2
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Surface mounted on a 1 in² pad of 2oz copper, t10s. In practice Rth,j-a will be determined by customer’s PCB characteristics.
3.100% tested by condition of L=0.1mH, IAS=20A, VGS=10V, VDD=10V.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
14
0.3
-
-
-
-
-
-
-
-
-
-
1.3
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
40 -
S VDS =5V, ID=20A
-
±100
nA VGS=±10V
-
-
1
5
μA
VDS =12V, VGS =0V
VDS =12V, VGS =0V, Tj=55°C
2.9 3.8
VGS =10V, ID=20A
3.7 5.3 mΩ VGS =4.5V, ID=20A
6.2 9.3
VGS =2.5V, ID=20A
Dynamic
Ciss - 1130 -
Coss
- 433 -
pF VDS=10V, VGS=0V, f=1MHz
Crss - 255 -
Qg *1, 2
10
14 18.6
Qgs *1, 2
-
1.3
-
nC VDS=10V, VGS=4.5V, ID=20A
Qgd *1, 2
-
6.3
-
MTA3D0N01H8
CYStek Product Specification


Features CYStech Electronics Corp. Spec. No. : C 098H8 Issued Date : 2016.04.18 Revised Date : 2016.04.27 Page No. : 1/10 N-Ch annel Logic Level Enhancement Mode Powe r MOSFET MTA3D0N01H8 BVDSS ID @ TC=25 C, VGS=4.5V 14V 44.5A ID @ TA=25°C, VGS=4.5V 15.4A VGS=10V, ID=20A 2.9m RDSON(TYP) VGS=4.5V, ID=20A 3.7mΩ Features VGS=2.5V, ID=20A 6.2mΩ • Single Drive Requirement • Low On-res istance • Fast Switching Characterist ic • Pb-free lead plating and halogen -free package Equivalent Circuit MTA3D 0N01H8 Outline Pin 1 DFN5×6 G:Gat e D:Drain S:Source Ordering Inform ation Device MTA3D0N01H8-0-T6-G Packa ge DFN5×6 (Pb-free lead plating and ha logen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly gra de : S for RoHS compliant products, G f or RoHS compliant and green compound pr oducts Packing spec, T6 : 3000 pcs / ta pe & reel,13” reel Product rank, zero for no rank products Product name MT A3D0N01H8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum R.
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