MTA3D0N01H8

CYStech Electronics Corp. Spec. No. : C098H8 Issued Date : 2016.04.18 Revised Date : 2016.04.27 Page No. : 1/10 N-Channel Logic Level Enhancement Mode Power MOSFET MTA3D0N01H8 BVDSS ID @ TC=25°C, VGS=4.5V 14V 44.5A ID @ TA=25°C, VGS=4.5V 15.4A VGS=10V, ID=20A 2.9mΩ RDSON(TYP) VGS=4.5V, ID=20A 3.7mΩ Features VGS=2.5V, ID=20A 6.2mΩ Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating and halogen-free package Equivalent Circuit MTA3D0N01H8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTA3D0N01H8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTA3D0N01H8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=4.5V, TC=25°C Continuous Drain Current @ VGS=4.5, TC=100°C Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current Avalanche Current @ L=0.1mH Avalanche Energy @ L=2mH, ID=15A, VDD=10V TC=25℃ Total Power Dissipation TC=100℃ TA=25℃ TA=70℃ Symbol VDS VGS ID IDSM IDM IAS EAS PD PDSM Operating Junction and ...