5N55-LC POWER MOSFET Datasheet

5N55-LC Datasheet, PDF, Equivalent


Part Number

5N55-LC

Description

N-CHANNEL POWER MOSFET

Manufacture

UTC

Total Page 7 Pages
Datasheet
Download 5N55-LC Datasheet


5N55-LC
UNISONIC TECHNOLOGIES CO., LTD
5N55-LC
5A, 550V N-CHANNEL
POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 5N55-LC is a high voltage power MOSFET designed
to have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications of switching power supplies and adaptors.
FEATURES
* RDS(ON) < 2.1@ VGS = 10V, ID = 2.5A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
1
TO-252
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
5N55L-TN3-R
5N55G-TN3-R
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-252
Pin Assignment
123
GDS
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2018 Unisonic Technologies Co., Ltd
1 of 7
QW-R205-499.A

5N55-LC
5N55-LC
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
550
V
Gate-Source Voltage
Continuous Drain Current
VGSS
ID
±30
5
V
A
Pulsed Drain Current (Note 2)
IDM 10
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
180
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt 3.1 V/ns
Power Dissipation
PD 52 W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 10mH, IAS = 6.0A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD 5.5A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
θJA 110
Junction to Case
θJC 2.5 (Note)
Note: The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
VGS = 0V, ID = 250μA
VDS = 550V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH) VDS = VGS, ID = 250μA
RDS(ON) VGS = 10V, ID = 2.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1.0 MHz
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 1)
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=100V, VGS=10V, ID=5.0A,
ID=1mA (Note 1, 2)
VDD=100V, VGS=10V, ID =5.0A,
RG =25(Note 1, 2)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS=5.0A , VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
IS=5.0A , VGS=0V di/dt=100A/μs
Notes: 1. Pulse Test: Pulse width 300μs, Duty cycle 2%.
2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
550 V
10 μA
100 nA
-100 nA
2.0 4.0 V
2.1
443 pF
60 pF
7 pF
17 nC
5.6 nC
4 nC
6.4 ns
17.5 ns
36.8 ns
53 ns
5
10
1.4
228
1.4
A
A
V
ns
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R205-499.A


Features UNISONIC TECHNOLOGIES CO., LTD 5N55-LC 5 A, 550V N-CHANNEL POWER MOSFET Power M OSFET  DESCRIPTION The UTC 5N55-LC is a high voltage power MOSFET designed to have better characteristics, such a s fast switching time, low gate charge, low on-state resistance and high rugge d avalanche characteristics. This power MOSFET is usually used in high speed s witching applications of switching powe r supplies and adaptors.  FEATURES * RDS(ON) < 2.1Ω @ VGS = 10V, ID = 2.5 A * Fast switching capability * Avalanc he energy tested * Improved dv/dt capab ility, high ruggedness  SYMBOL 1 TO -252  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Fre e 5N55L-TN3-R 5N55G-TN3-R Pin Assign ment: G: Gate D: Drain S: Source Packa ge TO-252 Pin Assignment 123 GDS Pack ing Tape Reel  MARKING www.unisoni c.com.tw Copyright © 2018 Unisonic Tec hnologies Co., Ltd 1 of 7 QW-R205-499. A 5N55-LC Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RA.
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