Document
UNISONIC TECHNOLOGIES CO., LTD 5N55-TC4
5A, 550V N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 5N55-TC4 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 5N55-TC4 is generally applied in high efficiency switch mode power supplies.
FEATURES
* RDS(ON) ≤ 1.9Ω @ VGS=10V, ID=2.5A * High Switching Speed SYMBOL
2.Drain
1 TO-251
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5N55L-TM3-T
5N55G-TM3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-251
Pin Assignment 123 GDS
Packing Tube
5N55G-TM3-T
(1)Packing Type (2)Package Type (3)Green Package
(1) T: Tube (2) TM3: TO-251 (3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
Lot Code
UTC 5N50
1
L: Lead Free G: Halogen Free
Date Code
www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 8
QW-R205-588.A
5N55-TC4
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
VDSS VGSS
ID IDM EAS dv/dt
550 V ± 30 V
5A 10 A 51.2 mJ 4.1 V/ns
Power Dissipation
PD 50 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 10mH, IAS = 3.2A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C 4. ISD ≤ 5.0A, di/dt ≤100A/μs, VDD ≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER Junction to Ambient Junction to Case
SYMBOL θJA θJC
RATINGS 110 2.5
UNIT °C/W °C/W
UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw
2 of 8
QW-R205-588.A
5N55-TC4
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
BVDSS IDSS
IGSS
VGS=0V, ID= 250μA VDS=550V, VGS=0V VGS=30V, VDS=0V VGS=-30V, VDS=0V
VGS(TH) RDS(ON)
VDS=VGS, ID=250μA VGS=10V, ID=2.5A
Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS
CISS COSS CRSS
VGS=0V, VDS=25V, f=1.0 MHz
Total Gate Charge (Note 1) Gateource Charge Gate-Drain Charge
QG QGS QGD
VDS=440V, VGS=10V, ID=5A IG=1mA (Note 1, 2)
Turn-on Delay Time (Note 1)
tD(ON)
Rise Time Turn-off Delay T.