5N55-TC4 POWER MOSFET Datasheet

5N55-TC4 Datasheet, PDF, Equivalent


Part Number

5N55-TC4

Description

N-CHANNEL POWER MOSFET

Manufacture

UTC

Total Page 8 Pages
Datasheet
Download 5N55-TC4 Datasheet


5N55-TC4
UNISONIC TECHNOLOGIES CO., LTD
5N55-TC4
5A, 550V N-CHANNEL
POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 5N55-TC4 is a N-channel mode power MOSFET
using UTCs advanced technology to provide customers with
planar stripe and DMOS technology. This technology allows a
minimum on-state resistance and superior switching performance.
It also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 5N55-TC4 is generally applied in high efficiency
switch mode power supplies.
FEATURES
* RDS(ON) 1.9Ω @ VGS=10V, ID=2.5A
* High Switching Speed
SYMBOL
2.Drain
1
TO-251
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5N55L-TM3-T
5N55G-TM3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-251
Pin Assignment
123
GDS
Packing
Tube
5N55G-TM3-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube
(2) TM3: TO-251
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
Lot Code
UTC
5N50
1
L: Lead Free
G: Halogen Free
Date Code
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 8
QW-R205-588.A

5N55-TC4
5N55-TC4
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
VDSS
VGSS
ID
IDM
EAS
dv/dt
550 V
± 30 V
5A
10 A
51.2 mJ
4.1 V/ns
Power Dissipation
PD 50 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 10mH, IAS = 3.2A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
4. ISD 5.0A, di/dt ≤100A/μs, VDD ≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
110
2.5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R205-588.A


Features UNISONIC TECHNOLOGIES CO., LTD 5N55-TC4 5A, 550V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 5N55-TC 4 is a N-channel mode power MOSFET usin g UTC’s advanced technology to provid e customers with planar stripe and DMOS technology. This technology allows a m inimum on-state resistance and superior switching performance. It also can wit hstand high energy pulse in the avalanc he and commutation mode. The UTC 5N55-T C4 is generally applied in high efficie ncy switch mode power supplies.  FEA TURES * RDS(ON) ≤ 1.9Ω @ VGS=10V, ID =2.5A * High Switching Speed  SYMBOL 2.Drain 1 TO-251 1.Gate 3.Source ORDERING INFORMATION Ordering Numbe r Lead Free Halogen Free 5N55L-TM3-T 5N55G-TM3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-25 1 Pin Assignment 123 GDS Packing Tube 5N55G-TM3-T (1)Packing Type (2)Packa ge Type (3)Green Package (1) T: Tube ( 2) TM3: TO-251 (3) G: Halogen Free and Lead Free, L: Lead Free  MARKING Lot Code UTC 5N50 1 L: Lead Free G: Ha.
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