MTN4N60BI3

CYStech Electronics Corp. Spec. No. : C128I3 Issued Date : 2015.06.01 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTN4N60BI3 BVDSS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=2A Features Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package 600V 4.0A 1.7Ω Applications Open Framed Power Supply Adapter STB Symbol MTN4N60BI3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTN4N60BI3-0-UA-G TO-251 (Pb-free lead plating and halogen-free package) 80 pcs/tube, 50 tubes/box MTN4N60BI3 Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA: 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C128I3 Issued Date : 2015.06.01 Revised Date : Page No. : 2/10 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Avalanche Current (Note 1) Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating...