MTN4N60BI3 Power MOSFET Datasheet

MTN4N60BI3 Datasheet, PDF, Equivalent


Part Number

MTN4N60BI3

Description

N-Channel Enhancement Mode Power MOSFET

Manufacture

CYStech

Total Page 10 Pages
Datasheet
Download MTN4N60BI3 Datasheet


MTN4N60BI3
CYStech Electronics Corp.
Spec. No. : C128I3
Issued Date : 2015.06.01
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTN4N60BI3
BVDSS
ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=2A
Features
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Pb-free lead plating and halogen-free package
600V
4.0A
1.7Ω
Applications
Open Framed Power Supply
Adapter
STB
Symbol
MTN4N60BI3
Outline
TO-251
GGate DDrain SSource
G DS
Ordering Information
Device
Package
Shipping
MTN4N60BI3-0-UA-G
TO-251
(Pb-free lead plating and halogen-free package)
80 pcs/tube, 50 tubes/box
MTN4N60BI3
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA: 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
CYStek Product Specification

MTN4N60BI3
CYStech Electronics Corp.
Spec. No. : C128I3
Issued Date : 2015.06.01
Revised Date :
Page No. : 2/10
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Avalanche Current
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TC=25)
Linear Derating Factor
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=4A, VDD=50V, L=4mH, VG=10V, starting TJ=+25.
3. ISD4A, dI/dt100A/μs, VDDBVDSS, starting TJ=+25.
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
dv/dt
TL
Pd
Tj, Tstg
Limits
600
±30
4*
2.4*
16*
4
34.9
5
4.5
300
50
0.4
-55~+150
Unit
V
A
mJ
V/ns
°C
W
W/°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
2.5
110
Unit
°C/W
MTN4N60BI3
CYStek Product Specification


Features CYStech Electronics Corp. Spec. No. : C 128I3 Issued Date : 2015.06.01 Revised Date : Page No. : 1/10 N-Channel Enhan cement Mode Power MOSFET MTN4N60BI3 B VDSS ID @ VGS=10V, TC=25°C RDSON(TYP ) @ VGS=10V, ID=2A Features • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • P b-free lead plating and halogen-free pa ckage 600V 4.0A 1.7Ω Applications Open Framed Power Supply • Adapter • STB Symbol MTN4N60BI3 Outline TO- 251 G:Gate D:Drain S:Source G D S Ordering Information Device Packag e Shipping MTN4N60BI3-0-UA-G TO-251 (Pb-free lead plating and halogen-free package) 80 pcs/tube, 50 tubes/box MT N4N60BI3 Environment friendly grade : S for RoHS compliant products, G for Ro HS compliant and green compound product s Packing spec, UA: 80 pcs / tube, 50 t ubes/box Product rank, zero for no rank products Product name CYStek Product S pecification CYStech Electronics Corp. Spec. No. : C128I3 Issued Date : 2015.06.01 Revised Date : Page No. : 2/10 Absolut.
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