MTP162M3

CYStech Electronics Corp. 30V P-CHANNEL Enhancement Mode MOSFET MTP162M3 Spec. No. : C420M3 Issued Date : 2007.10.08 Revised Date : 2013.08.12 Page No. : 1/8 Features Single Drive Requirement Low On-resistance, RDS(ON)=80mΩ@VGS=-4.5V, ID=-3.0A Ultra High Speed Switching Pb-free package Symbol MTP162M3 Outline SOT-89 G：Gate S：Source D：Drain G DD S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) VDS VGS ID ID IDM Pd -30 ±12 -5 -4 -20 *1, 3 2 *2 Linear Derating Factor 0.02 Thermal Resistance, Junction to Ambient Rth,ja 62.5 *2 Operating Junction and Storage Temperature Tj, Tstg -55~+150 Note : *1. Pulse width limited by maximum junction temperature *2. Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on min. copper pad *3. Pulse width≤300μs, duty cycle≤2% Unit V V A A A W W/°C °C/W °C MTP162M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C420M3 Issued Date : 2007.10.08 Revised Date : 2013.08.12 Page No. : 2/8 Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Min. Static BVDSS ∆BVDSS/∆Tj VGS(th) GFS IGSS IDSS *RDS(ON) -30 - -0.5 - - - Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *trr *Qrr - - Typ. -0.1 9 50 56 70 1075 54 60 7 5 27 9 7 1.8 2.3 25 20 Max. -1.2 ...