MTP162M3 Mode MOSFET Datasheet

MTP162M3 Datasheet, PDF, Equivalent


Part Number

MTP162M3

Description

30V P-CHANNEL Enhancement Mode MOSFET

Manufacture

CYStech

Total Page 8 Pages
Datasheet
Download MTP162M3 Datasheet


MTP162M3
CYStech Electronics Corp.
30V P-CHANNEL Enhancement Mode MOSFET
MTP162M3
Spec. No. : C420M3
Issued Date : 2007.10.08
Revised Date : 2013.08.12
Page No. : 1/8
Features
Single Drive Requirement
Low On-resistance, RDS(ON)=80mΩ@VGS=-4.5V, ID=-3.0A
Ultra High Speed Switching
Pb-free package
Symbol
MTP162M3
Outline
SOT-89
GGate
SSource
DDrain
G DD S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C
Continuous Drain Current @ TA=70°C
Pulsed Drain Current
Total Power Dissipation (TA=25)
VDS
VGS
ID
ID
IDM
Pd
-30
±12
-5
-4
-20 *1, 3
2 *2
Linear Derating Factor
0.02
Thermal Resistance, Junction to Ambient
Rth,ja
62.5 *2
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
Note : *1. Pulse width limited by maximum junction temperature
*2. Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on min. copper pad
*3. Pulse width300μs, duty cycle2%
Unit
V
V
A
A
A
W
W/°C
°C/W
°C
MTP162M3
CYStek Product Specification

MTP162M3
CYStech Electronics Corp.
Spec. No. : C420M3
Issued Date : 2007.10.08
Revised Date : 2013.08.12
Page No. : 2/8
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Min.
Static
BVDSS
BVDSS/Tj
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
-30
-
-0.5
-
-
-
-
-
-
-
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Source-Drain Diode
*VSD
*trr
*Qrr
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.1
-
9
-
-
-
50
56
70
1075
54
60
7
5
27
9
7
1.8
2.3
-
25
20
Max.
-
-
-1.2
-
±100
-1
-25
60
75
90
1325
-
-
-
-
-
-
-
-
-
-1.2
-
-
Unit Test Conditions
V
V/°C
V
S
nA
μA
μA
mΩ
VGS=0, ID=-250μA
Reference to 25°C, ID=-1mA
VDS=VGS, ID=-250μA
VDS=-5V, ID=-3A
VGS=±12V, VDS=0
VDS=-30V, VGS=0
VDS=-24V, VGS=0 (Tj=70°C)
ID=-3.2A, VGS=-10V
ID=-3.0A, VGS=-4.5V
ID=-2.0A, VGS=-2.5V
pF VDS=-25V, VGS=0, f=1MHz
ns VDS=-15V, ID=-1A, VGS=-10V, RG=3.3Ω
nC VDS=-24V, ID=-5A, VGS=-4.5V
V VGS=0V, IS=-1.2A
ns
nC
IS=-5A, VGS=0, dI/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Ordering Information
Device
MTP162M3
Package
SOT-89
(Pb-free)
Shipping
1000 pcs / Tape & Reel
Marking
162
MTP162M3
CYStek Product Specification


Features CYStech Electronics Corp. 30V P-CHANNEL Enhancement Mode MOSFET MTP162M3 Spec. No. : C420M3 Issued Date : 2007.10.08 Revised Date : 2013.08.12 Page No. : 1/ 8 Features • Single Drive Requiremen t • Low On-resistance, RDS(ON)=80mΩ@ VGS=-4.5V, ID=-3.0A • Ultra High Spee d Switching • Pb-free package Symbol MTP162M3 Outline SOT-89 G:Gate S :Source D:Drain G DD S Absolute M aximum Ratings (Ta=25°C) Parameter S ymbol Limits Drain-Source Voltage Gat e-Source Voltage Continuous Drain Curre nt @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total P ower Dissipation (TA=25℃) VDS VGS ID ID IDM Pd -30 ±12 -5 -4 -20 *1, 3 2 *2 Linear Derating Factor 0.02 Therm al Resistance, Junction to Ambient Rth ,ja 62.5 *2 Operating Junction and St orage Temperature Tj, Tstg -55~+150 Note : *1. Pulse width limited by maxim um junction temperature *2. Surface mou nted on 1 in² copper pad of FR-4 board ; 270 °C/W when mounted on min. copper pad *3. Pulse width≤300μs, duty cycle≤2% Unit.
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