LM5105 Gate Driver Datasheet

LM5105 Datasheet, PDF, Equivalent


Part Number

LM5105

Description

100-V Half-Bridge Gate Driver

Manufacture

etcTI

Total Page 26 Pages
Datasheet
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LM5105
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LM5105
SNVS349E – FEBRUARY 2005 – REVISED AUGUST 2016
LM5105 100-V Half-Bridge Gate Driver With Programmable Dead Time
1 Features
1 Drives Both a High-Side and Low-Side N-Channel
MOSFET
• 1.8-A Peak Gate Drive Current
• Bootstrap Supply Voltage Range up to 118-V DC
• Integrated Bootstrap Diode
• Single TTL Compatible Input
• Programmable Turnon Delays (Dead Time)
• Enable Input Pin
• Fast Turnoff Propagation Delays (26 ns Typical)
• Drives 1000 pF With 15-ns Rise and Fall Time
• Supply Rail Undervoltage Lockout
• Low Power Consumption
• Package: Thermally Enhanced 10-Pin WSON
(4 mm × 4 mm)
2 Applications
• Solid-State Motor Drives
• Half- and Full-Bridge Power Converters
3 Description
The LM5105 is a high-voltage gate driver designed to
drive both the high-side and low-side N–Channel
MOSFETs in a synchronous buck or half-bridge
configuration. The floating high-side driver is capable
of working with rail voltages up to 100 V. The single
control input is compatible with TTL signal levels and
a single external resistor programs the switching
transition dead time through tightly matched turnon
delay circuits. A high-voltage diode is provided to
charge the high-side gate-drive bootstrap capacitor.
The robust level shift technology operates at high
speed while consuming low power and provides clean
output transitions. Undervoltage lockout disables the
gate driver when either the low-side or the
bootstrapped high-side supply voltage is below the
operating threshold. The LM5105 is offered in the
thermally enhanced WSON plastic package.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
LM5105
WSON (10)
4.00 mm × 4.00 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Simplified Application Diagram
VDD
IN
RDT
EN
HB
UVLO
VDD
UVLO
LEADING
EDGE
DELAY
LEADING
EDGE
DELAY
LEVEL
SHIFT
HB
DRIVER
HO
HS
VSS
VDD
DRIVER
LO
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

LM5105
LM5105
SNVS349E – FEBRUARY 2005 – REVISED AUGUST 2016
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions ......................... 3
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information .................................................. 5
6.5 Electrical Characteristics........................................... 5
6.6 Switching Characteristics .......................................... 6
6.7 Typical Characteristics .............................................. 8
7 Detailed Description ............................................ 11
7.1 Overview ................................................................. 11
7.2 Functional Block Diagram ....................................... 11
7.3 Feature Description................................................. 11
7.4 Device Functional Modes ....................................... 12
8 Application and Implementation ........................ 13
8.1 Application Information............................................ 13
8.2 Typical Application .................................................. 13
9 Power Supply Recommendations...................... 16
9.1 Power Dissipation Considerations .......................... 16
9.2 HS Transient Voltages Below Ground .................... 16
10 Layout................................................................... 17
10.1 Layout Guidelines ................................................. 17
10.2 Layout Example ................................................... 17
11 Device and Documentation Support ................. 18
11.1 Documentation Support ........................................ 18
11.2 Receiving Notification of Documentation Updates 18
11.3 Community Resource............................................ 18
11.4 Trademarks ........................................................... 18
11.5 Electrostatic Discharge Caution ............................ 18
11.6 Glossary ................................................................ 18
12 Mechanical, Packaging, and Orderable
Information ........................................................... 18
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision D (March 2016) to Revision E
Page
• Updated values in the Thermal Information table to align with JEDEC standards................................................................. 5
Changes from Revision C (March 2013) to Revision D
Page
• Added Device Information table, ESD Ratings, Detailed Description section, Application and Implementation
section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable
Information section ................................................................................................................................................................. 1
Changes from Revision B (March 2013) to Revision C
Page
• Changed layout of National Semiconductor Data Sheet to TI format .................................................................................. 13
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Product Folder Links: LM5105
Copyright © 2005–2016, Texas Instruments Incorporated


Features Product Folder Sample & Buy Technical Documents Tools & Software Support & Community LM5105 SNVS349E – FEBRUARY 2005 – REVISED AUGUST 2016 LM5105 10 0-V Half-Bridge Gate Driver With Progra mmable Dead Time 1 Features •1 Drive s Both a High-Side and Low-Side N-Chann el MOSFET • 1.8-A Peak Gate Drive Cur rent • Bootstrap Supply Voltage Range up to 118-V DC • Integrated Bootstra p Diode • Single TTL Compatible Input • Programmable Turnon Delays (Dead T ime) • Enable Input Pin • Fast Turn off Propagation Delays (26 ns Typical) • Drives 1000 pF With 15-ns Rise and Fall Time • Supply Rail Undervoltage Lockout • Low Power Consumption • P ackage: Thermally Enhanced 10-Pin WSON (4 mm × 4 mm) 2 Applications • Solid -State Motor Drives • Half- and Full- Bridge Power Converters 3 Description The LM5105 is a high-voltage gate drive r designed to drive both the high-side and low-side N–Channel MOSFETs in a s ynchronous buck or half-bridge configuration. The floating high-side driver is capable of working .
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