N-Channel Logic Level Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C898Q8 Issued Date : 2013.04.19 Revised Date : 2014.03.31 Page No. : 1/9
N -Chan...
Description
CYStech Electronics Corp.
Spec. No. : C898Q8 Issued Date : 2013.04.19 Revised Date : 2014.03.31 Page No. : 1/9
N -Channel Logic Level Enhancement Mode Power MOSFET
MTD55N10Q8 BVDSS ID
VGS=10V, ID=4.5A
RDSON(TYP) VGS=6V, ID=4A
Features
VGS=4.5V, ID=3A
Low Gate Charge Simple Drive Requirement Pb-free lead plating package
100V 4.9A 52mΩ 57mΩ 73mΩ
Symbol
MTD55N10Q8
Outline
Pin 1
SOP-8
G:Gate D:Drain S:Source
Ordering Information
Device MTD55N10Q8-0-T3-G
Package
SOP-8 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products Product name
MTD55N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=70°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=10mH, ID=4.5A, VGS=20V, VDD=25V
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation *3
TA=25℃ TA=70℃
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID
IDM IAS EAS EAR
PD
Tj, Tstg
Spec. No. : C898Q8 Issued Date : 2013.04.19 Revised Date : 2014.03.31 Page No. : 2/9
Limits
100 ±20 4.9 3.9 32 *1 4.5 101 0.5 *2 3.1
2
-55~+150
Unit V
A
mJ W °C
Thermal Data
Parameter
Symb...
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