MTD55N10Q8 Power MOSFET Datasheet

MTD55N10Q8 Datasheet, PDF, Equivalent


Part Number

MTD55N10Q8

Description

N-Channel Logic Level Enhancement Mode Power MOSFET

Manufacture

CYStech

Total Page 9 Pages
Datasheet
Download MTD55N10Q8 Datasheet


MTD55N10Q8
CYStech Electronics Corp.
Spec. No. : C898Q8
Issued Date : 2013.04.19
Revised Date : 2014.03.31
Page No. : 1/9
N -Channel Logic Level Enhancement Mode Power MOSFET
MTD55N10Q8 BVDSS
ID
VGS=10V, ID=4.5A
RDSON(TYP) VGS=6V, ID=4A
Features
VGS=4.5V, ID=3A
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating package
100V
4.9A
52mΩ
57mΩ
73mΩ
Symbol
MTD55N10Q8
Outline
Pin 1
SOP-8
GGate
DDrain
SSource
Ordering Information
Device
MTD55N10Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD55N10Q8
CYStek Product Specification

MTD55N10Q8
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=70°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=10mH, ID=4.5A, VGS=20V, VDD=25V
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation *3
TA=25
TA=70
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Spec. No. : C898Q8
Issued Date : 2013.04.19
Revised Date : 2014.03.31
Page No. : 2/9
Limits
100
±20
4.9
3.9
32 *1
4.5
101
0.5 *2
3.1
2
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
20 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
40 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle1%.
3. Surface mounted on 1 in² copper pad of FR-4 board, t10s ; 125°C/W when mounted on minimum copper pad.
The value in any given application depends on the user’s specific board design.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON) *1
GFS *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
100
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
- - V VGS=0, ID=250μA
2.3 3 V VDS =VGS, ID=250μA
-
±100
nA VGS=±20, VDS=0
-
-
1
25
μA
VDS =80V, VGS =0
VDS =80V, VGS =0, TJ=125°C
52 70
VGS =10V, ID=4.5A
57 80 mΩ VGS =6V, ID=4A
73 90
VGS =4.5V, ID=3A
7 - S VDS =5V, ID=3A
12 17
1.8 2.4 nC ID=4.5A, VDS=80V, VGS=10V
5.7 7.5
5 10
4
16
8
32
ns
VDS=50V, ID=4.5A, VGS=10V,
RG=6Ω
9 18
MTD55N10Q8
CYStek Product Specification


Features CYStech Electronics Corp. Spec. No. : C 898Q8 Issued Date : 2013.04.19 Revised Date : 2014.03.31 Page No. : 1/9 N -Ch annel Logic Level Enhancement Mode Powe r MOSFET MTD55N10Q8 BVDSS ID VGS=10V, ID=4.5A RDSON(TYP) VGS=6V, ID=4A Fea tures VGS=4.5V, ID=3A • Low Gate Ch arge • Simple Drive Requirement • P b-free lead plating package 100V 4.9A 52mΩ 57mΩ 73mΩ Symbol MTD55N10Q8 O utline Pin 1 SOP-8 G:Gate D:Drain S:Source Ordering Information Devic e MTD55N10Q8-0-T3-G Package SOP-8 (Pb- free lead plating and halogen-free pack age) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS complia nt and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13 reel Product rank, zero for no rank p roducts Product name MTD55N10Q8 CYSte k Product Specification CYStech Electr onics Corp. Absolute Maximum Ratings ( Ta=25°C) Parameter Drain-Source Volt age Gate-Source Voltage Continuous Drain Current @VGS=10V, TA=25°C Continuous D.
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