MTD5D0C03J4

CYStech Electronics Corp. Spec. No. : C704J4 Issued Date : 2017.08.28 Revised Date : 2017.12.06 Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET MTD5D0C03J4 BVDSS ID @ VGS=10V(-10V), TA=25°C ID @ VGS=10V(-10V), TC=25°C Features RDSON(typ.) @VGS=(-)10V Low Gate Charge RDSON(typ.) @VGS=+4.5V(-5V) Simple Drive Requirement RoHS compliant & Halogen-free package N-CH 30V 8.6A 33.5A 7.7 mΩ 9.6 mΩ P-CH -30V -6.0A -23.0A 17.7mΩ 27.1 mΩ Equivalent Circuit MTD5D0C03J4 Outline TO-252-4L Tab D1/D2 G：Gate D：Drain S：Source S1G1 S2G2 Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Parameter Symbol Limits N-channel P-channel Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current @ TC=25°C, VGS=10V(-10V) (Note1) 33.5 -23.0 Continuous Drain Current @ TC=100°C, VGS=10V(-10V) (Note1) Continuous Drain Current @ TA=25°C, VGS=10V(-10V) (Note4) ID 21.2 -14.6 8.6 -6.0 Continuous Drain Current @ TA=70°C, VGS=10V(-10V) (Note4) 6.9 -4.8 Pulsed Drain Current *1 (Note3) IDM 134 -92 Single Pulse Avalanche Current @ L=0.1mH IAS 33.5 -23 Single Pulse Avalanche Energy @L=1mH (Note5) EAS 128 128 Total Power Dissipation (TC=25℃) Total Power Dissipation (TC=100℃) (Note1) (Note1) PD 25 10 Total Power Dissipation (TA=25℃) Total Power Dissipation (TA=70℃) (Note2) (Note2) PDSM 2.4 1.7 Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 Unit V A mJ W °C MTD5D0C03J4 CYStek Product Spec...