NVGS5120P P-Channel MOSFET Datasheet

NVGS5120P Datasheet, PDF, Equivalent


Part Number

NVGS5120P

Description

P-Channel MOSFET

Manufacture

ON Semiconductor

Total Page 6 Pages
Datasheet
Download NVGS5120P Datasheet


NVGS5120P
NTGS5120P, NVGS5120P
MOSFET – Power, Single,
P-Channel, TSOP-6
-60 V, -2.9 A
Features
60 V BVds, Low RDS(on) in TSOP6 Package
4.5 V Gate Rating
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
This is a PbFree Device
Applications
High Side Load Switch
Power Switch for Printers, Communication Equipment
http://onsemi.com
V(BR)DSS
60 V
RDS(ON) MAX
111 mW @ 10 V
142 mW @ 4.5 V
ID MAX
2.9 A
PChannel
1256
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
tv5s
Steady
State
tv5s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
60
$20
2.5
2.0
2.9
1.1
1.4
V
V
A
W
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
1.8
1.3 A
0.6 W
Pulsed Drain Current tp = 10 ms
Operating Junction and Storage Temperature
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
TJ,
TSTG
TL
20
55 to
150
260
A
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
2. Surfacemounted on FR4 board using the minimum recommended pad size.
3
4
MARKING
DIAGRAM
TSOP6
CASE 318G
XX MG
1 STYLE 1
G
1
XX = Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Drain Drain Source
6 54
1 23
Drain Drain Gate
ORDERING INFORMATION
See detailed ordering and shipping information ion page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
May, 2019 Rev. 1
1
Publication Order Number:
NTGS5120P/D

NVGS5120P
NTGS5120P, NVGS5120P
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
JunctiontoAmbient – Steady State (Note 3)
RqJA
JunctiontoAmbient – t = 5 s (Note 3)
RqJA
JunctiontoAmbient – Steady State (Note 4)
RqJA
3. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
4. Surfacemounted on FR4 board using the minimum recommended pad size.
Value
102
77.6
200
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 5)
V(BR)DSS
IDSS
IGSS
VGS = 0 V, ID = 250 mA
VVDGSS==048V,V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±12 V
VDS = 0 V, VGS = ±20 V
60
1.0
5.0
$100
$200
V
mA
nA
nA
Gate Threshold Voltage
DraintoSource On Resistance
VGS(TH)
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 2.9 A
VGS = 4.5 V, ID = 2.5 A
VDS = 5.0 V, ID = 6.0 A
1.0
72
88
10.1
3.0
111
142
V
mW
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
SWITCHING CHARACTERISTICS (Note 6)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1 MHz, VDS = 30 V
VGS = 10 V, VDS = 30 V;
ID = 2.9 A
942
72
48
18.1
1.2
2.7
3.6
pF
nC
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
DRAINSOURCE DIODE CHARACTERISTICS
td(ON)
tr
td(OFF)
tf
VGS = 10 V, VDS = 30 V,
ID = 1.0 A, RG = 6.0 W
8.7
4.9
38
12.8
ns
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 0.9 A
0.75 1.0
V
Reverse Recovery Time
Charge Time
Reverse Recovery Charge
tRR
ta
QRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 0.9 A
18.3
15.5
15.1
ns
ns
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
http://onsemi.com
2


Features NTGS5120P, NVGS5120P MOSFET – Power, Single, P-Channel, TSOP-6 -60 V, -2.9 A Features • 60 V BVds, Low RDS(on) i n TSOP−6 Package • 4.5 V Gate Ratin g • NV Prefix for Automotive and Othe r Applications Requiring Unique Site an d Control Change Requirements; AEC−Q1 01 Qualified and PPAP Capable • This is a Pb−Free Device Applications • High Side Load Switch • Power Switch for Printers, Communication Equipment http://onsemi.com V(BR)DSS −60 V RD S(ON) MAX 111 mW @ −10 V 142 mW @ − 4.5 V ID MAX −2.9 A P−Channel 125 6 MAXIMUM RATINGS (TJ = 25°C unless o therwise stated) Parameter Symbol Val ue Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State P ower Dissipation (Note 1) tv5s Steady State tv5s TA = 25°C TA = 85°C TA = 25°C TA = 25°C VDSS VGS ID PD −60 $20 −2.5 −2.0 −2.9 1.1 1.4 V V A W Continuous Drain Current (Note 2) Power Dissipation (Note 2) Steady State TA = 25°C TA = 85°C TA = 25°C ID PD −1.8 −1.3 A 0.6 W Pulsed Drain Cu.
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