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NSVR351SDSA3

ON Semiconductor

Schottky Barrier Diode

NSVR351SDSA3 Schottky Barrier Diode for Mixer and Detector Description This schottky barrier diode is designed to real...


ON Semiconductor

NSVR351SDSA3

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Description
NSVR351SDSA3 Schottky Barrier Diode for Mixer and Detector Description This schottky barrier diode is designed to realize compact and efficient designs. Two schottky barrier diodes are incorporated in one SC−59 package. The use of dual schottky barrier diodes can reduce both system cost and board space. This schottky barrier diode is AEC−Q101 qualified and PPAP capable for automotive applications. Features Series Connection of 2 Elements in a Small−Sized Package Small Interterminal Capacitance (C = 0.69 pF typ) Small Forward Voltage (VF = 0.23 V max) These Devices are Pb−Free, Halogen Free and are RoHS Compliant AEC−Q101 Qualified and PPAP Capable Typical Applications Level Detector for Radio Specifications ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Value Unit Reverse Voltage Forward Current Operating Junction and Storage Temperature VRM IF TJ, TStg 5 30 −55 to +125 V mA °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. LOT No. LOT No. www.onsemi.com 5 V, 30 mA C = 0.69 pF typ Shottky Barrier Diode 3 12 SC−59 / CP3 CASE 318BJ ELECTRICAL CONNECTION 3 1 : Anode 2 : Cathode 3 : Anode / Cathode 12 MARKING DIAGRAM CH ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 May, 2018 − Rev.0...




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