NSR0240V2 Barrier Diode Datasheet

NSR0240V2 Datasheet, PDF, Equivalent


Part Number

NSR0240V2

Description

Schottky Barrier Diode

Manufacture

ON Semiconductor

Total Page 4 Pages
Datasheet
Download NSR0240V2 Datasheet


NSR0240V2
NSR0240V2, NSVR0240V2
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc−dc
converter, clamping and protection applications in portable devices.
NSR0240V2 in a SOD−523 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
Features
Very Low Forward Voltage Drop − 480 mV @ 100 mA
Low Reverse Current − 0.2 mA @ 25 V VR
250 mA of Continuous Forward Current
Power Dissipation of 200 mW with Minimum Trace
Very High Switching Speed
Low Capacitance − CT = 4 pF
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
Markets
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
MAXIMUM RATINGS
Rating
Symbol Value Unit
Reverse Voltage
Forward Continuous Current (DC)
Non−Repetitive Peak Forward Surge Current
VR
IF
IFSM
40 Vdc
250 mA
2.0 A
ESD Rating: Human Body Model
Machine Model
ESD
Class 2
Class A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.onsemi.com
40 VOLT SCHOTTKY
BARRIER DIODE
SOD−523
CASE 502
1
CATHODE
2
ANODE
MARKING DIAGRAM
AC M G
G
12
AC = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation position may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
NSR0240V2T1G
NSVR0240V2T1G
NSR0240V2T5G
Package
SOD−523
(Pb−Free)
SOD−523
(Pb−Free)
SOD−523
(Pb−Free)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
8,000 /
Tape & Reel
NSVR0240V2T5G SOD−523
(Pb−Free)
8,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
August, 2018 − Rev. 4
1
Publication Order Number:
NSR0240V2T1/D

NSR0240V2
NSR0240V2, NSVR0240V2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
PD
600
200
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
PD
300
400
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
Unit
°C/W
mW
°C/W
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Leakage
(VR = 10 V)
(VR = 25 V)
(VR = 40 V)
IR mA
− − 0.55
− 0.2 2.0
− 0.5 10
Forward Voltage
(IF = 10 mA)
(IF = 100 mA)
(IF = 200 mA)
VF mV
− 345 390
− 485 550
− 580 700
Total Capacitance
(VR = 5.0 V, f = 1 MHz)
CT pF
− 4.0 −
Reverse Recovery Time
(IF = IR = 10 mA, IR = 1.0 mA)
trr ns
− 3.0 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
DC Current
Source
+−
0.1 mF
tr tp
0V
10%
750 mH
IF
50 W Output
Pulse
Generator
0.1 mF
Adjust for IRM
DUT
90%
VR
Pulse Generator
Output
IF
trr
RL = 50 W
50 W Input
Oscilloscope
Current
Transformer
iR(REC) = 1 mA
IRM
Output Pulse
(IF = IRM = 10 mA; measured
at iR(REC) = 1 mA)
1. DC Current Source is adjusted for a Forward Current (IF) of 10 mA.
2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA.
3. Pulse Generator transition time << trr.
4. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM.
5. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
www.onsemi.com
2


Features NSR0240V2, NSVR0240V2 Schottky Barrier Diode Schottky barrier diodes are optim ized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, cla mping and protection applications in po rtable devices. NSR0240V2 in a SOD−52 3 miniature package enables designers t o meet the challenging task of achievin g higher efficiency and meeting reduced space requirements. Features • Very Low Forward Voltage Drop − 480 mV @ 1 00 mA • Low Reverse Current − 0.2 m A @ 25 V VR • 250 mA of Continuous Fo rward Current • Power Dissipation of 200 mW with Minimum Trace • Very High Switching Speed • Low Capacitance CT = 4 pF • NSV Prefix for Automoti ve and Other Applications Requiring Uni que Site and Control Change Requirement s; AEC−Q101 Qualified and PPAP Capabl e • These Devices are Pb−Free, Halo gen Free/BFR Free and are RoHS Complian t Typical Applications • LCD and Keyp ad Backlighting • Camera Photo Flash • Buck and Boost dc−dc Converters • Reverse Voltage and Cu.
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