MTB1D8NR03E3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB1D8NR03E3 Spec. No. : C948E3 Issued Date : 2015.05.08 Revised Date : Page No. : 1/8 Features Low Gate Charge Simple Drive Requirement Fast Switching Characteristic RoHS compliant package BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=30A RDSON(TYP) @ VGS=4.5V, ID=20A 30V 180A 2.7mΩ 3.3mΩ Symbol MTB1D8NR03E3 Outline TO-220 G：Gate D：Drain S：Source SDG Ordering Information Device Package Shipping MTB1D8NR03E3-0-UB-S TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTB1D8NR03E3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V (silicon limit) Continuous Drain Current @ TC=100°C, VGS=10V (silicon limit) Continuous Drain Current @ TC=25°C, VGS=10V(package limit) (Note 1) Pulsed Drain Current (Note 3) Continuous Drain Current @ TA=25°C, VGS=10V (Note 2) Continuous Drain Current @ TA=70°C, VGS=10V (Note 2) Avalanche Current (Note 3) Avalanche Energy @ L=100μH, ID=80A, RG=25Ω (Note 2) Power Dissipation TC=25°C TC=100°C (Note 1) (Note 1) Power Dissipation TA=25°C TA=70°C (No...