MTB1D8NR03E3 Power MOSFET Datasheet

MTB1D8NR03E3 Datasheet, PDF, Equivalent


Part Number

MTB1D8NR03E3

Description

N-Channel Enhancement Mode Power MOSFET

Manufacture

CYStech

Total Page 8 Pages
Datasheet
Download MTB1D8NR03E3 Datasheet


MTB1D8NR03E3
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB1D8NR03E3
Spec. No. : C948E3
Issued Date : 2015.05.08
Revised Date :
Page No. : 1/8
Features
Low Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
RoHS compliant package
BVDSS
ID @VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=30A
RDSON(TYP) @ VGS=4.5V, ID=20A
30V
180A
2.7mΩ
3.3mΩ
Symbol
MTB1D8NR03E3
Outline
TO-220
GGate
DDrain
SSource
SDG
Ordering Information
Device
Package
Shipping
MTB1D8NR03E3-0-UB-S
TO-220
(Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB1D8NR03E3
CYStek Product Specification

MTB1D8NR03E3
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V (silicon limit)
Continuous Drain Current @ TC=100°C, VGS=10V (silicon limit)
Continuous Drain Current @ TC=25°C, VGS=10V(package limit)
(Note 1)
Pulsed Drain Current
(Note 3)
Continuous Drain Current @ TA=25°C, VGS=10V (Note 2)
Continuous Drain Current @ TA=70°C, VGS=10V (Note 2)
Avalanche Current
(Note 3)
Avalanche Energy @ L=100μH, ID=80A, RG=25Ω (Note 2)
Power Dissipation
TC=25°C
TC=100°C
(Note 1)
(Note 1)
Power Dissipation
TA=25°C
TA=70°C
(Note 2)
(Note 2)
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
IDSM
IAS
EAS
PD
PDSM
Tj, Tstg
Spec. No. : C948E3
Issued Date : 2015.05.08
Revised Date :
Page No. : 2/8
Limits
30
±20
180
127
120
540
18.6
14.9
80
320
214
107
2
1.3
-55~+175
Unit
V
A
mJ
W
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, t10s (Note 1)
Thermal Resistance, Junction-to-ambient, max
(Note 1)
Symbol
Rth,j-c
Rth,j-a
Value
0.7
15
62.5
Unit
°C/W
°C/W
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. The maximum current limited by package is 120A.
5. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
6. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTB1D8NR03E3
CYStek Product Specification


Features CYStech Electronics Corp. N-Channel Enha ncement Mode Power MOSFET MTB1D8NR03E3 Spec. No. : C948E3 Issued Date : 2015. 05.08 Revised Date : Page No. : 1/8 Fe atures • Low Gate Charge • Simple D rive Requirement • Fast Switching Cha racteristic • RoHS compliant package BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=30A RDSON(TYP) @ VGS=4.5 V, ID=20A 30V 180A 2.7mΩ 3.3mΩ Symb ol MTB1D8NR03E3 Outline TO-220 G:Ga te D:Drain S:Source SDG Ordering Information Device Package Shipping MTB1D8NR03E3-0-UB-S TO-220 (Pb-free l ead plating package) 50 pcs/tube, 20 t ubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and gree n compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product ran k, zero for no rank products Product na me MTB1D8NR03E3 CYStek Product Specif ication CYStech Electronics Corp. Abs olute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuou.
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