MTB1K0A20KQ8 Power MOSFET Datasheet

MTB1K0A20KQ8 Datasheet, PDF, Equivalent


Part Number

MTB1K0A20KQ8

Description

Dual N-Channel Enhancement Mode Power MOSFET

Manufacture

CYStech

Total Page 9 Pages
Datasheet
Download MTB1K0A20KQ8 Datasheet


MTB1K0A20KQ8
CYStech Electronics Corp.
Dual N-Channel Enhancement Mode Power MOSFET
MTB1K0A20KQ8
Spec. No. : C043Q8
Issued Date : 2017.08.17
Revised Date : 2020.01.13
Page No. : 1/9
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Dual N-ch MOSFET package
ESD protected gate
Pb-free lead plating & Halogen-free package
BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TA=70°C
RDSON@VGS=10V, ID=1A
RDSON@VGS=4.5V, ID=1A
200V
0.9A
0.72A
755mΩ(typ)
785mΩ(typ)
Equivalent Circuit
MTB1K0A20KQ8
Outline
SOP-8
D2
D2
D1
D1
GGate DDrain SSource
G2
S2
G1
S1
Ordering Information
Device
MTB1KA20KQ8-0-T3-G
MTB1KA20KQ8-0-TF-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
4000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13reel, TF : 4000 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB1K0A20KQ8
Preliminary
CYStek Product Specification

MTB1K0A20KQ8
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25C
Continuous Drain Current @ VGS=10V, TC=100C
Continuous Drain Current @ VGS=10V, TA=25C
Continuous Drain Current @ VGS=10V, TA=70C
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=2A, VDD=50V
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
Spec. No. : C043Q8
Issued Date : 2017.08.17
Revised Date : 2020.01.13
Page No. : 2/9
Limits
200
±20
1.4
0.89
0.9 (Note 2)
0.72 (Note 2)
6 (Note 1)
2
2 (Note 4)
2
1.6 (Note 2)
0.9 (Note 3)
-55~+150
Unit
V
A
mJ
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, dual
Thermal Resistance, Junction-to-ambient, max , single operation
Note : 1. Pulse width limited by maximum junction temperature
2. Surface mounted on 1 in²copper pad of FR-4 board, pulse width10s.
3. Surface mounted on minimum copper pad, pulse width10s.
Symbol
RθJC
RθJA
Value
25
62.5
78 (Note 2)
135 (Note 3)
Unit
C/W
Characteristics (Tj=25C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
200
1
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS =VGS, ID=250μA
- 3 - S VDS =10V, ID=1A
- - ±10
VGS=±16V, VDS=0V
- - 1 μA VDS =160V, VGS =0V
- - 25
VDS =160V, VGS =0V, Tj=70C
-
0.755
2
Ω VGS =10V, ID=1A
-
0.785
3
VGS =4.5V, ID=1A
- 8.5 12.8
- 1.1 - nC VDS=160V, ID=1A, VGS=10V
- 2.9 -
MTB1K0A20KQ8
Preliminary
CYStek Product Specification


Features CYStech Electronics Corp. Dual N-Channel Enhancement Mode Power MOSFET MTB1K0A2 0KQ8 Spec. No. : C043Q8 Issued Date : 2017.08.17 Revised Date : 2020.01.13 Pa ge No. : 1/9 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSF ET package • ESD protected gate • P b-free lead plating & Halogen-free pack age BVDSS ID@VGS=10V, TA=25°C ID@VGS= 10V, TA=70°C RDSON@VGS=10V, ID=1A RDSO N@VGS=4.5V, ID=1A 200V 0.9A 0.72A 755m Ω(typ) 785mΩ(typ) Equivalent Circuit MTB1K0A20KQ8 Outline SOP-8 D2 D2 D1 D 1 G:Gate D:Drain S:Source G2 S2 G1 S1 Ordering Information Device MT B1KA20KQ8-0-T3-G MTB1KA20KQ8-0-TF-G Pa ckage SOP-8 (Pb-free lead plating and h alogen-free package) SOP-8 (Pb-free lea d plating and halogen-free package) Sh ipping 2500 pcs / tape & reel 4000 pcs / tape & reel Environment friendly gra de : S for RoHS compliant products, G f or RoHS compliant and green compound pr oducts Packing spec, T3 : 2500 pcs / tape & reel, 13” reel, TF : 4000 pcs/tape & ree.
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