N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
N-Channel Enhancement Mode MOSFET
MTB1K0N20KL3
Spec. No. : C043L3 Issued Date : 2017.07.03 Re...
Description
CYStech Electronics Corp.
N-Channel Enhancement Mode MOSFET
MTB1K0N20KL3
Spec. No. : C043L3 Issued Date : 2017.07.03 Revised Date : 2018.02.09 Page No. : 1/9
Features
Low Gate Charge Simple Drive Requirement ESD protected gate, HBM 6kV, typically Pb-free lead plating & Halogen-free package
BVDSS ID @ VGS=10V, TA=25°C RDSON@VGS=10V, ID=2A RDSON@VGS=4.5V, ID=1A
200V 1A 830mΩ (typ.) 777mΩ (typ.)
Equivalent Circuit
MTB1K0N20KL3
Outline
SOT-223
D
G:Gate D:Drain S:Source
S D G
Ordering Information
Device MTB1K0N20KL3-0-T3-G
Package
SOT-223 (Pb-free lead plating & Halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products
Product name
MTB1K0N20KL3
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Pulsed Drain Current *1 Avalanche Current @ L=0.1mH Avalanche Energy @ L=1mH, ID=2A, VDD=50V *2 Repetitive Avalanche Energy @ L=0.05mH ESD susceptibility *3 Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=70℃
Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature
*2. Guaranteed by design, not...
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