MTB1K0N20KL3 Power MOSFET Datasheet

MTB1K0N20KL3 Datasheet, PDF, Equivalent


Part Number

MTB1K0N20KL3

Description

N-Channel Enhancement Mode Power MOSFET

Manufacture

CYStech

Total Page 9 Pages
Datasheet
Download MTB1K0N20KL3 Datasheet


MTB1K0N20KL3
CYStech Electronics Corp.
N-Channel Enhancement Mode MOSFET
MTB1K0N20KL3
Spec. No. : C043L3
Issued Date : 2017.07.03
Revised Date : 2018.02.09
Page No. : 1/9
Features
Low Gate Charge
Simple Drive Requirement
ESD protected gate, HBM 6kV, typically
Pb-free lead plating & Halogen-free package
BVDSS
ID @ VGS=10V, TA=25°C
RDSON@VGS=10V, ID=2A
RDSON@VGS=4.5V, ID=1A
200V
1A
830mΩ (typ.)
777mΩ (typ.)
Equivalent Circuit
MTB1K0N20KL3
Outline
SOT-223
D
GGate DDrain
SSource
S
D
G
Ordering Information
Device
MTB1K0N20KL3-0-T3-G
Package
SOT-223
(Pb-free lead plating & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB1K0N20KL3
Preliminary
CYStek Product Specification

MTB1K0N20KL3
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current *1
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=2A, VDD=50V *2
Repetitive Avalanche Energy @ L=0.05mH
ESD susceptibility *3
Total Power Dissipation @TA=25
Total Power Dissipation @TA=70
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Guaranteed by design, not by 100% test.
*3. Human body model, 1.5kΩ in series with 100pF
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
VESD
PD
Tj, Tstg
Spec. No. : C043L3
Issued Date : 2017.07.03
Revised Date : 2018.02.09
Page No. : 2/9
Limits
200
±20
1
0.8
4
2
2
0.625
6000
2.4
1.5
-55~+150
Unit
V
A
mJ
V
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Note : When mounted on a 1 in2 pad of 2 oz. copper.
Symbol
RθJC
RθJA
Value
10
52 (Note)
Unit
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
200 -
1-
-
3
V
VGS=0V, ID=250μA
VDS =VGS, ID=250μA
GFS *1
-
3.1
-
S VDS =10V, ID=1A
IGSS - - ±10
VGS=±16V, VDS=0V
IDSS
- - 1 μA VDS =160V, VGS =0V
- - 25
VDS =160V, VGS =0V, Tj=125°C
RDS(ON) *1
-
-
0.83
0.78
1.08
1.6
Ω
VGS =10V, ID=2A
VGS =4.5V, ID=1A
Dynamic
Qg *1, 2
- 5.2 7.8
Qgs *1, 2 - 1 1.5 nC VDS=150V, VGS=5V, ID=3.6A
Qgd *1, 2
- 2.8 4.2
td(ON) *1, 2 - 39 58.5
tr *1, 2
td(OFF) *1, 2
-
-
80.4
94.2
120.6
141.3
ns VDS=100V, ID=3.6A, VGS=5V, RG=25Ω
tf *1, 2
- 59.2 88.8
MTB1K0N20KL3
Preliminary
CYStek Product Specification


Features CYStech Electronics Corp. N-Channel Enha ncement Mode MOSFET MTB1K0N20KL3 Spec. No. : C043L3 Issued Date : 2017.07.03 Revised Date : 2018.02.09 Page No. : 1/ 9 Features • Low Gate Charge • Sim ple Drive Requirement • ESD protected gate, HBM 6kV, typically • Pb-free l ead plating & Halogen-free package BVD SS ID @ VGS=10V, TA=25°C RDSON@VGS=10V , ID=2A RDSON@VGS=4.5V, ID=1A 200V 1A 830mΩ (typ.) 777mΩ (typ.) Equivalent Circuit MTB1K0N20KL3 Outline SOT-223 D G:Gate D:Drain S:Source S D G Ordering Information Device MTB1K0N 20KL3-0-T3-G Package SOT-223 (Pb-free lead plating & Halogen-free package) S hipping 2500 pcs / Tape & Reel Environ ment friendly grade : S for RoHS compli ant products, G for RoHS compliant and green compound products Packing spec, T 3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB1K0N20KL3 Preliminar y CYStek Product Specification CYStec h Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) P.
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