N-CHANNEL MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
AM7296
MOSFET N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
AM7296 is available in DFN8...
Description
AiT Semiconductor Inc.
www.ait-ic.com
AM7296
MOSFET N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
AM7296 is available in DFN8 (3.3x3.3) package.
ORDERING INFORMATION
Package Type
Part Number
DFN8(3.3x3.3)
AM7296J8R
J8
SPQ: 5,000pcs/Reel
AM7296J8VR
Note
V: Halogen free Package R: Tape & Reel
AiT provides all RoHS products
FEATURES
100V/15A, RDS(ON)= 54mΩ(max.) @ VGS=10V
100% UIS + Rg Tested Reliable and Rugged Available in DFN8 (3.3x3.3) package.
APPLICATION
Power Management in DC/DC Converter. POE Protection Switch.
PIN DESCRIPTION
REV1.0
- SEP 2019 RELEASED -
N-Channel MOSFET
-1-
AiT Semiconductor Inc.
www.ait-ic.com
PIN DESCRIPTION
AM7296
MOSFET N-CHANNEL ENHANCEMENT MODE
Pin # 1 2 3 4 5 6 7 8
Top View Symbol
S S S G D D D D
Function Source Source Source Gate Drain Drain Drain Drain
REV1.0
- SEP 2019 RELEASED -
-2-
AiT Semiconductor Inc.
www.ait-ic.com
AM7296
MOSFET N-CHANNEL ENHANCEMENT MODE
ABSOLUTE MAXIMUM RATINGS
TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage
100V
VGSS, Gate-Source Voltage
±20V
TJ, Maximum Junction Temperature
150℃
TSTG, Storage Temperature Range
-55℃~+150℃
IS, Diode Continuous Forward Current
TC=25°C
7A
ID, Continuous Drain Current
TC=25°C TC=100°C
15A 9.6A
IDMNOTE1, Pulsed Drain Current
TC=25°C
60A
PD, Maximum Power Dissipation
TC=25°C TC=100°C
25W 10W
RθJC, Thermal Resistance-Junction to Case
5°C/W
ID, Continuous Drain Current
TA=25°C TA=70°C
3.8A 3A
PD, Maximum Power Dissipation...
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