AM7296 N-CHANNEL MOSFET Datasheet

AM7296 Datasheet, PDF, Equivalent


Part Number

AM7296

Description

N-CHANNEL MOSFET

Manufacture

AiT Semiconductor

Total Page 10 Pages
Datasheet
Download AM7296 Datasheet


AM7296
AiT Semiconductor Inc.
www.ait-ic.com
AM7296
MOSFET
N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
AM7296 is available in DFN8 (3.3x3.3) package.
ORDERING INFORMATION
Package Type
Part Number
DFN8(3.3x3.3)
AM7296J8R
J8
SPQ: 5,000pcs/Reel
AM7296J8VR
Note
V: Halogen free Package
R: Tape & Reel
AiT provides all RoHS products
FEATURES
100V/15A,
RDS(ON)= 54mΩ(max.) @ VGS=10V
100% UIS + Rg Tested
Reliable and Rugged
Available in DFN8 (3.3x3.3) package.
APPLICATION
Power Management in DC/DC Converter.
POE Protection Switch.
PIN DESCRIPTION
REV1.0
- SEP 2019 RELEASED -
N-Channel MOSFET
-1-

AM7296
AiT Semiconductor Inc.
www.ait-ic.com
PIN DESCRIPTION
AM7296
MOSFET
N-CHANNEL ENHANCEMENT MODE
Pin #
1
2
3
4
5
6
7
8
Top View
Symbol
S
S
S
G
D
D
D
D
Function
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
REV1.0
- SEP 2019 RELEASED -
-2-


Features AiT Semiconductor Inc. www.ait-ic.com A M7296 MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION AM7296 is available in DF N8 (3.3x3.3) package. ORDERING INFORMA TION Package Type Part Number DFN8(3 .3x3.3) AM7296J8R J8 SPQ: 5,000pcs/R eel AM7296J8VR Note V: Halogen free Package R: Tape & Reel AiT provides al l RoHS products FEATURES  100V/15A, RDS(ON)= 54mΩ(max.) @ VGS=10V  100 % UIS + Rg Tested  Reliable and Rugg ed  Available in DFN8 (3.3x3.3) pack age. APPLICATION  Power Management i n DC/DC Converter.  POE Protection S witch. PIN DESCRIPTION REV1.0 - SEP 2 019 RELEASED - N-Channel MOSFET -1- A iT Semiconductor Inc. www.ait-ic.com PI N DESCRIPTION AM7296 MOSFET N-CHANNEL ENHANCEMENT MODE Pin # 1 2 3 4 5 6 7 8 Top View Symbol S S S G D D D D Func tion Source Source Source Gate Drain Dr ain Drain Drain REV1.0 - SEP 2019 REL EASED - -2- AiT Semiconductor Inc. ww w.ait-ic.com AM7296 MOSFET N-CHANNEL E NHANCEMENT MODE ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted .
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