Document
AiT Semiconductor Inc.
www.ait-ic.com
AM1160H
MOSFET N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
AM1160H is available in a TO-252 package.
ORDERING INFORMATION
Package Type
Part Number
TO-252
AM1160HDR
D
SPQ: 2,500pcs/Reel
AM1160HDVR
Note
V: Halogen free Package R: Tape & Reel
AiT provides all RoHS products
FEATURES
600V/11A, RDS(ON)= 0.36Ω(max.) @ VGS= 10V VDS@TJ, max=700V (typ.)
Reliable and Rugged Avalanche Rated Available in a TO-252 package.
APPLICATION
AC/DC Power Conversion in Switched Mode Power Supplies (SMPS).
Uninterruptible Power Supply (UPS), Adapter.
PIN DESCRIPTION
REV1.0
- SEP 2019 RELEASED -
N-Channel MOSFET
-1-
AiT Semiconductor Inc.
www.ait-ic.com
PIN DESCRIPTION
AM1160H
MOSFET N-CHANNEL ENHANCEMENT MODE
Pin # 1 2 3
Top View Symbol
G D S
Function Gate Drain Source
REV1.0
- SEP 2019 RELEASED -
-2-
AiT Semiconductor Inc.
www.ait-ic.com
AM1160H
MOSFET N-CHANNEL ENHANCEMENT MODE
ABSOLUTE MAXIMUM RATINGS
TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage
600V
VGSS, Gate-Source Voltage
±30V
TJ, Maximum Junction Temperature
150℃
TSTG, Storage Temperature Range
-55℃~+150℃
IS, Diode Continuous Forward Current
11ANOTE1
IDP, Pulse Drain Current Tested
TC=25°C
44ANOTE2
ID, Continuous Drain Current
TC=25°C TC=100°C
11ANOTE1 6.9ANOTE1
PD, Maximum Power Dissipation
TC=25°C TC=100°C
108W 43W
RθJC, Thermal Resistance-Junction to Case
1.15°C/W
RθJA, Thermal Resistance-Junction to Ambient
62.5°C/W
Drain-Source Avalanche Ratings
dv/dtNOTE2, MOSFET dv/dt Ruggedness
50V/ns
EASNOTE3, Avalanche Energy, Single Pulsed
140mJ
IARNOTE4, Avalanche Current
2A
EARNOTE4, Repetitive Avalanche Energy
0.4mJ
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: limited by maximum junction temperature. NOTE2: VDS=480V, ID=11A. NOTE3: ID=2A, VDD=50V, TJ=25°C. NOTE4: Repetitive Rating: Pulse width limited by maximum junction temperature.
REV1.0
- SEP 2019 RELEASED -
-3-
AiT Semiconductor Inc.
www.ait-ic.com
AM1160H
MOSFET N-CHANNEL ENHANCEMENT MODE
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted Parameter
Static Characteristics Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance
Symbol
BVDSS
IDSS VGS(th) IGSS RDS(ON)
NOTE5
Conditions
VGS=0V, IDS=250μA TJ =150°C
VDS=480V, VGS=0V TJ =150°C
VDS=VGS, IDS=250μA VGS=±30V, VDS=0V
VGS=10V, IDS=4A
Diode Characteristics Diode Forward Voltage
VSD
NOTE5
ISD=11A, VGS=0V
Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current
trr ISD=11A, VR=360V,
Qrr dlSD/dt=100A/μs
Irm
Dynamic CharacteristicsNOTE.