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AM1160H Dataheets PDF



Part Number AM1160H
Manufacturers AiT Semiconductor
Logo AiT Semiconductor
Description N-CHANNEL MOSFET
Datasheet AM1160H DatasheetAM1160H Datasheet (PDF)

AiT Semiconductor Inc. www.ait-ic.com AM1160H MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION AM1160H is available in a TO-252 package. ORDERING INFORMATION Package Type Part Number TO-252 AM1160HDR D SPQ: 2,500pcs/Reel AM1160HDVR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products FEATURES  600V/11A, RDS(ON)= 0.36Ω(max.) @ VGS= 10V VDS@TJ, max=700V (typ.)  Reliable and Rugged  Avalanche Rated  Available in a TO-252 package. APPLICATION  AC/DC Power Conver.

  AM1160H   AM1160H



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AiT Semiconductor Inc. www.ait-ic.com AM1160H MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION AM1160H is available in a TO-252 package. ORDERING INFORMATION Package Type Part Number TO-252 AM1160HDR D SPQ: 2,500pcs/Reel AM1160HDVR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products FEATURES  600V/11A, RDS(ON)= 0.36Ω(max.) @ VGS= 10V VDS@TJ, max=700V (typ.)  Reliable and Rugged  Avalanche Rated  Available in a TO-252 package. APPLICATION  AC/DC Power Conversion in Switched Mode Power Supplies (SMPS).  Uninterruptible Power Supply (UPS),  Adapter. PIN DESCRIPTION REV1.0 - SEP 2019 RELEASED - N-Channel MOSFET -1- AiT Semiconductor Inc. www.ait-ic.com PIN DESCRIPTION AM1160H MOSFET N-CHANNEL ENHANCEMENT MODE Pin # 1 2 3 Top View Symbol G D S Function Gate Drain Source REV1.0 - SEP 2019 RELEASED - -2- AiT Semiconductor Inc. www.ait-ic.com AM1160H MOSFET N-CHANNEL ENHANCEMENT MODE ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage 600V VGSS, Gate-Source Voltage ±30V TJ, Maximum Junction Temperature 150℃ TSTG, Storage Temperature Range -55℃~+150℃ IS, Diode Continuous Forward Current 11ANOTE1 IDP, Pulse Drain Current Tested TC=25°C 44ANOTE2 ID, Continuous Drain Current TC=25°C TC=100°C 11ANOTE1 6.9ANOTE1 PD, Maximum Power Dissipation TC=25°C TC=100°C 108W 43W RθJC, Thermal Resistance-Junction to Case 1.15°C/W RθJA, Thermal Resistance-Junction to Ambient 62.5°C/W Drain-Source Avalanche Ratings dv/dtNOTE2, MOSFET dv/dt Ruggedness 50V/ns EASNOTE3, Avalanche Energy, Single Pulsed 140mJ IARNOTE4, Avalanche Current 2A EARNOTE4, Repetitive Avalanche Energy 0.4mJ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: limited by maximum junction temperature. NOTE2: VDS=480V, ID=11A. NOTE3: ID=2A, VDD=50V, TJ=25°C. NOTE4: Repetitive Rating: Pulse width limited by maximum junction temperature. REV1.0 - SEP 2019 RELEASED - -3- AiT Semiconductor Inc. www.ait-ic.com AM1160H MOSFET N-CHANNEL ENHANCEMENT MODE ELECTRICAL CHARACTERISTICS TA = 25℃, unless otherwise noted Parameter Static Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Symbol BVDSS IDSS VGS(th) IGSS RDS(ON) NOTE5 Conditions VGS=0V, IDS=250μA TJ =150°C VDS=480V, VGS=0V TJ =150°C VDS=VGS, IDS=250μA VGS=±30V, VDS=0V VGS=10V, IDS=4A Diode Characteristics Diode Forward Voltage VSD NOTE5 ISD=11A, VGS=0V Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current trr ISD=11A, VR=360V, Qrr dlSD/dt=100A/μs Irm Dynamic CharacteristicsNOTE.


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