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SZNCP3712ASN Dataheets PDF



Part Number SZNCP3712ASN
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Over Voltage Protected High Side Switch
Datasheet SZNCP3712ASN DatasheetSZNCP3712ASN Datasheet (PDF)

NCP3712ASN, SZNCP3712ASN Over Voltage Protected High Side Switch This switch is primarily intended to protect loads from transients by isolating the load from the transient energy rather than absorbing it. Features • Capable of Switching Loads of up to 200 mA without External Rboost • Switch Shuts Off in Response to an Over Voltage Input Transient • Features Active Turn Off for Fast Input Transient Protection • Flexible Over Voltage Protection Threshold Set with External Zener • Automatic Recov.

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NCP3712ASN, SZNCP3712ASN Over Voltage Protected High Side Switch This switch is primarily intended to protect loads from transients by isolating the load from the transient energy rather than absorbing it. Features • Capable of Switching Loads of up to 200 mA without External Rboost • Switch Shuts Off in Response to an Over Voltage Input Transient • Features Active Turn Off for Fast Input Transient Protection • Flexible Over Voltage Protection Threshold Set with External Zener • Automatic Recovery after Transient Decays Below Threshold • Withstands Input Transients up to 105 V Peak • Guaranteed Off State with Enbl Input • ESD Resistant in Accordance with the 2000 V Human Body Model • Extremely Low Saturation Voltage • SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free Devices Applications Include: • High Voltage Transient Isolation • Power Switching to Electronic Modules • DC Power Distribution in Line Operated Equipment • Buffering Sensitive Circuits from Poorly Regulated Power Supplies • Pre−conditioning of Voltage Regulator Input Voltage http://onsemi.com MARKING DIAGRAM 6 1 SC−74 CASE 318F BAG MG G BAG = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) INTERNAL CIRCUIT DIAGRAM/ PIN CONFIGURATION Vin Vout Q2 (5) R2 (6) R4 Q1 N.C. (2) R1 Rboost (3) R3 Vin Vout Rboost NCP3712ASN + P. S. − VZ Enbl or 1 k (min) Ropt L O A D SW (4) VZ (1) Enbl ORDERING INFORMATION Device Package Shipping† NCP3712ASNT1G SC−74 3000 / Tape & SZNCP3712ASNT1G (Pb−Free) Reel NCP3712ASNT3G SC−74 10,000 / Tape & SZNCP3712ASNT3G (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Figure 1. Typical Application Circuit © Semiconductor Components Industries, LLC, 2014 June, 2014 − Rev. 8 1 Publication Order Number: NCP3712ASNT1/D NCP3712ASN, SZNCP3712ASN MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1) Rating Symbol Value Unit Input−to−Output Voltage Reverse Input−to−Vz. Voltage Reverse Input−to−Rboost Voltage Output Load Current − Continuous Enbl Input Current − Continuous Vz Input Current − Continuous Rboost Input Current − Continuous Junction Temperature Operating Ambient Temperature Range Storage Temperature Range Device Power Dissipation (Minimum Footprint) Derate Above 25°C Vio Vin(rev) Vin(rev) Iload Ienbl Iz Iboost TJ TA Tstg PD − 105 −9.0 − 5.0 −300 5.0 3.0 10 125 −40 to +85 −65 to +150 300 2.4 V V V mA mA mA mA °C °C °C mW mW/°C Latchup Performance: Positive Negative ILatchup 200 mA 200 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device contains ESD protection and exceeds the following tests: Human Body Model 1500 V per MIL−STD−883, Method 3015. Machine Model Method 150 V. A+ 1N4004 0.01 mF TYP FB* 0.027 mF TYP 18 V TYP Ropt FB* A− *FB = MMZ2012 Y601B Enbl Ienbl 1 N.C. 2 Rboost Iboost 3 NCP3712 ASN Vout 6 Vin 5 VZ 4 Iload IZ Rload Renbl Figure 2. Typical Applications Circuit for Load Dump Transient Protection KEY 0−500 W 1.0 k TYP AMPLITUDE (V) AMPLITUDE (V) 15 13.5 V SUPPLY RAIL “ENABLE NOT” 10 INPUT 50% AMPLITUDE 5 tpLH DEVICE OUTPUT VOLTAGE LOAD DEPENDENT EXP DECAY 0 0 5 10 15 20 25 30 35 40 45 50 TIME (ms) Figure 3. Enable NOT Switching Waveforms 120 100 80 60 40 20 Voff TYPICAL INPUT TRANSIENT 13.5 V SUPPLY RAIL LOAD DEPENDENT OUTPUT EXP DECAY Von 0 0 50 100 150 200 250 300 350 TIME (ms) Figure 4. Load Dump Waveforms http://onsemi.com 2 NCP3712ASN, SZNCP3712ASN ELECTRICAL CHARACTERISTICS (Vin = 12.5 VDC Ref to Gnd, TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ OFF CHARACTERISTICS Input−Output Breakdown Voltage (@ Iout = 200 mA) Output Reverse Breakdown Voltage (@ Iout = −1.0 mA Pulse) Output Leakage Current (Vin = Venbl = 30 V, TA = 25°C) Guaranteed “Off” State “ENBL NOT” Voltage (IO ≤ 100 mA) Required “Off” State Iz Current (Rload = 100 W) Vin(off) (Vz = 16 V, Iload = 100 mA, Renbl = 1500 W) ON CHARACTERISTICS Input−Output On Voltage (Io = 100 mA, Ienbl = −3.0 mA) Output Load Current ⎯ Continuous (Ienbl = −3.0 mA, Vio(on) = 0.5 Vdc) (Iboost = −9.0 mA, Vio(on) = 0.5 Vdc) (Iboost = −9.0 mA, Vio(on) = 0.6 Vdc) Vin(on) (Vz = 16 V, Iload = 100 mA, Renbl = 1500 W) “ENBL NOT” Input Current (Io = 100 mA, Vio(on) = 0.35 Vdc, Renbl = 1500 W) SWITCHING CHARACTERISTICS Propagation Delay Time: Hi to Lo Prop Delay; Fig. 3 (Vin = Venbl = 13.5 V) Lo to Hi P.


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