MTA9D0P03Q8 P-Channel MOSFET Datasheet

MTA9D0P03Q8 Datasheet, PDF, Equivalent


Part Number

MTA9D0P03Q8

Description

P-Channel MOSFET

Manufacture

CYStech

Total Page 9 Pages
Datasheet
Download MTA9D0P03Q8 Datasheet


MTA9D0P03Q8
CYStech Electronics Corp.
Spec. No. : C050Q8
Issued Date : 2019.02.18
Revised Date : 2020.02.25
Page No. : 1/9
P-Channel Enhancement Mode MOSFET
MTA9D0P03Q8
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free lead plating and halogen-free package
BVDSS
ID@VGS=-10V, TA=25°C
ID@VGS=-10V, TA=70°C
RDSON@VGS=-10V, ID=-12A
RDSON@VGS=-4.5V,ID=-10A
RDSON@VGS=-3V,ID=-5A
-30V
-14A
-11.2A
10mΩ(typ)
13.2mΩ(typ)
23.5mΩ(typ)
Equivalent Circuit
MTA9D0P03Q8
Outline
D
D
SOP-8
D
D
GGate
SSource
DDrain
Pin 1
G
S
S
S
Ordering Information
Device
MTA9D0P03Q8-0-T3-G
MTA9D0P03Q8-0-TF-G
Package
Shipping
SOP-8
(Pb-free lead plating and halogen-free package)
2500 pcs/ Tape & Reel
SOP-8
(Pb-free lead plating and halogen-free package)
4000 pcs/ Tape & Reel
MTA9D0P03Q8
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel,13reel ,TF : 4000 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
CYStek Product Specification

MTA9D0P03Q8
CYStech Electronics Corp.
Spec. No. : C050Q8
Issued Date : 2019.02.18
Revised Date : 2020.02.25
Page No. : 2/9
Absolute Maximum Ratings (Ta=25C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=-10V, TA=25°C
Continuous Drain Current @ VGS=-10V, TA=70°C
(Note 1)
(Note 1)
Pulsed Drain Current (Note 2)
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=-16A, VDD=-25V (Note 3)
Total Power Dissipation (Note 1)
TA=25 C
TA=70 C
Operating Junction and Storage Temperature
Symbol
BVDSS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
Note : 1.Surface mounted on FR-4 board, t10sec.
2.Pulse width 300μs, Duty Cycle2%
3.100% tested by conditions of VDD=-25V, VGS=-10V, L=0.1mH, IAS=-20A
Limits
-30
±20
-14
-11.2
-56
-34
128
3.1
2
-55~+150
Unit
V
A
mJ
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Note : Surface mounted on 1 in²copper pad of FR-4 board, pulse width10s.
Value
20
40 (Note )
Unit
C/W
Electrical Characteristics (Tj=25C, unless otherwise specified)
Symbol Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
-30
-0.8
-
-
-
-1.6
V
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
IGSS - - ±100 nA VGS=±20V, VDS=0V
IDSS
-
-
-
-
-1
-5
μA
VDS=-24V, VGS=0V
VDS=-24V, VGS=0V, Tj=55°C
- 10 13
VGS=-10V, ID=-12A
*RDS(ON) - 13.2 18 mVGS=-4.5V, ID=-10A
23.5 47
VGS=-3V, ID=-5A
*GFS
- 24 - S VDS=-5V, ID=-10A
Dynamic
Ciss
-
2343
-
Coss
- 238 - pF VDS=-25V, VGS=0V, f=1MHz
Crss - 198 -
*td(ON) - 11 -
*tr
*td(OFF)
-
-
9-
73.8 -
ns VDD=-15V, ID=-12A, VGS=-10V, RG=1Ω
*tf - 12.8 -
MTA9D0P03Q8
CYStek Product Specification


Features CYStech Electronics Corp. Spec. No. : C 050Q8 Issued Date : 2019.02.18 Revised Date : 2020.02.25 Page No. : 1/9 P-Cha nnel Enhancement Mode MOSFET MTA9D0P03 Q8 Features • Simple drive requiremen t • Low on-resistance • Fast switch ing speed • Pb-free lead plating and halogen-free package BVDSS ID@VGS=-10V , TA=25°C ID@VGS=-10V, TA=70°C RDSON@ VGS=-10V, ID=-12A RDSON@VGS=-4.5V,ID=-1 0A RDSON@VGS=-3V,ID=-5A -30V -14A -11. 2A 10mΩ(typ) 13.2mΩ(typ) 23.5mΩ(typ) Equivalent Circuit MTA9D0P03Q8 Outli ne D D SOP-8 D D G:Gate S:Source D:Drain Pin 1 G S S S Ordering Inf ormation Device MTA9D0P03Q8-0-T3-G MTA 9D0P03Q8-0-TF-G Package Shipping SOP -8 (Pb-free lead plating and halogen-fr ee package) 2500 pcs/ Tape & Reel SOP -8 (Pb-free lead plating and halogen-fr ee package) 4000 pcs/ Tape & Reel MTA 9D0P03Q8 Environment friendly grade : S for RoHS compliant products, G for Ro HS compliant and green compound product s Packing spec, T3 : 2500 pcs / tape & reel,13” reel ,TF : 4000 pcs/tape & reel, 1.
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