STB33N60DM6 N-channel MOSFET Datasheet

STB33N60DM6 Datasheet, PDF, Equivalent


Part Number

STB33N60DM6

Description

N-channel MOSFET

Manufacture

STMicroelectronics

Total Page 15 Pages
Datasheet
Download STB33N60DM6 Datasheet


STB33N60DM6
STB33N60DM6
Datasheet
N-channel 600 V, 115 mΩ typ., 25 A, MDmesh™ DM6 Power MOSFET
in a D2PAK package
TAB
2
3
1
D²PAK
D(2, TAB)
G(1)
S(3)
AM01475V1
Features
Order code
VDS
RDS(on) max.
STB33N60DM6
600 V
128 mΩ
• Fast-recovery body diode
• Lower RDS(on) per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
ID
25 A
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-
recovery diode series. Compared with the previous MDmesh fast generation, DM6
combines very low recovery charge (Qrr), recovery time (trr) and excellent
improvement in RDS(on) per area with one of the most effective switching behaviors
available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
Product status link
STB33N60DM6
Product summary
Order code
STB33N60DM6
Marking
33N60DM6
Package
D2PAK
Packing
Tape and reel
DS12904 - Rev 1 - February 2019
For further information contact your local STMicroelectronics sales office.
www.st.com

STB33N60DM6
STB33N60DM6
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt(2)
Peak diode recovery voltage slope
dv/dt(3)
MOSFET dv/dt ruggedness
Tstg Storage temperature range
Tj Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. ISD ≤ 25 A, di/dt ≤ 900 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V
3. VDS ≤ 480 V
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb(1)
Thermal resistance junction-pcb
1. When mounted on FR-4 board of 1 inch², 2oz Cu.
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Value
±25
25
16
80
190
50
100
-55 to 150
Unit
V
A
A
A
W
V/ns
V/ns
°C
Value
0.66
30
Unit
°C/W
°C/W
Value
4
360
Unit
A
mJ
DS12904 - Rev 1
page 2/15


Features STB33N60DM6 Datasheet N-channel 600 V, 1 15 mΩ typ., 25 A, MDmesh™ DM6 Power MOSFET in a D2PAK package TAB 2 3 1 D PAK D(2, TAB) G(1) S(3) AM01475V1 F eatures Order code VDS RDS(on) max. STB33N60DM6 600 V 128 mΩ • Fast -recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and res istance • 100% avalanche tested • E xtremely high dv/dt ruggedness • Zene r-protected ID 25 A Applications • Switching applications Description Thi s high-voltage N-channel Power MOSFET i s part of the MDmesh™ DM6 fastrecover y diode series. Compared with the previ ous MDmesh fast generation, DM6 combine s very low recovery charge (Qrr), recov ery time (trr) and excellent improvemen t in RDS(on) per area with one of the m ost effective switching behaviors avail able in the market for the most demandi ng high-efficiency bridge topologies an d ZVS phase-shift converters. Product status link STB33N60DM6 Product summary Order code STB33N60DM6 Marking 33N60DM6 .
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