STP33N60DM6 N-channel MOSFET Datasheet

STP33N60DM6 Datasheet, PDF, Equivalent


Part Number

STP33N60DM6

Description

N-channel MOSFET

Manufacture

STMicroelectronics

Total Page 13 Pages
Datasheet
Download STP33N60DM6 Datasheet


STP33N60DM6
STP33N60DM6
Datasheet
N-channel 600 V, 115 mΩ typ., 25 A, MDmesh™ DM6 Power MOSFET
in a TO220 package
TAB
TO-220
1 23
D(2, TAB)
G(1)
S(3)
AM01475V1
Features
Order code
VDS
RDS(on) max.
STP33N60DM6
600 V
128 mΩ
• Fast-recovery body diode
• Lower RDS(on) per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
ID
25 A
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-
recovery diode series. Compared with the previous MDmesh fast generation, DM6
combines very low recovery charge (Qrr), recovery time (trr) and excellent
improvement in RDS(on) per area with one of the most effective switching behaviors
available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
Product status link
STP33N60DM6
Product summary
Order code
STP33N60DM6
Marking
33N60DM6
Package
TO-220
Packing
Tube
DS12878 - Rev 2 - January 2019
For further information contact your local STMicroelectronics sales office.
www.st.com

STP33N60DM6
STP33N60DM6
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt(2)
Peak diode recovery voltage slope
dv/dt(3)
MOSFET dv/dt ruggedness
Tstg Storage temperature range
Tj Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. ISD ≤ 25 A, di/dt ≤ 900 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V
3. VDS ≤ 480 V
Symbol
Rthj-case
Rthj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
±25
25
16
80
190
50
100
-55 to 150
Unit
V
A
A
A
W
V/ns
V/ns
°C
Value
0.66
62.5
Unit
°C/W
°C/W
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Value
4
360
Unit
A
mJ
DS12878 - Rev 2
page 2/13


Features STP33N60DM6 Datasheet N-channel 600 V, 1 15 mΩ typ., 25 A, MDmesh™ DM6 Power MOSFET in a TO‑220 package TAB TO-2 20 1 23 D(2, TAB) G(1) S(3) AM0147 5V1 Features Order code VDS RDS(on) max. STP33N60DM6 600 V 128 mΩ Fast-recovery body diode • Lower RD S(on) per area vs previous generation Low gate charge, input capacitance a nd resistance • 100% avalanche tested • Extremely high dv/dt ruggedness Zener-protected ID 25 A Application s • Switching applications Descripti on This high-voltage N-channel Power MO SFET is part of the MDmesh™ DM6 fastr ecovery diode series. Compared with the previous MDmesh fast generation, DM6 c ombines very low recovery charge (Qrr), recovery time (trr) and excellent impr ovement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most d emanding high-efficiency bridge topolog ies and ZVS phase-shift converters. Pr oduct status link STP33N60DM6 Product summary Order code STP33N60DM6 Marking 33N6.
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