STF33N60DM6 N-channel MOSFET Datasheet

STF33N60DM6 Datasheet, PDF, Equivalent


Part Number

STF33N60DM6

Description

N-channel MOSFET

Manufacture

STMicroelectronics

Total Page 13 Pages
Datasheet
Download STF33N60DM6 Datasheet


STF33N60DM6
STF33N60DM6
Datasheet
N-channel 600 V, 115 mΩ typ., 25 A, MDmesh™ DM6 Power MOSFET
in a TO220FP package
23
1
TO-220FP
D(2)
Features
Order code
VDS
RDS(on) max.
STF33N60DM6
600 V
128 mΩ
• Fast-recovery body diode
• Lower RDS(on) per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
ID
25 A
Applications
G(1) • Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-
S(3) AM15572v1_no_tab recovery diode series. Compared with the previous MDmesh fast generation, DM6
combines very low recovery charge (Qrr), recovery time (trr) and excellent
improvement in RDS(on) per area with one of the most effective switching behaviors
available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
Product status link
STF33N60DM6
Product summary
Order code
STF33N60DM6
Marking
33N60DM6
Package
TO-220FP
Packing
Tube
DS12937 - Rev 1 - February 2019
For further information contact your local STMicroelectronics sales office.
www.st.com

STF33N60DM6
STF33N60DM6
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt(2)
Peak diode recovery voltage slope
dv/dt(3)
MOSFET dv/dt ruggedness
VISO
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg Storage temperature range
Tj Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. ISD ≤ 25 A, di/dt ≤ 900 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V
3. VDS ≤ 480 V
Symbol
Rthj-case
Rthj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
±25
25
16
80
35
50
100
2.5
-55 to 150
Value
3.6
62.5
Unit
V
A
A
A
W
V/ns
V/ns
kV
°C
Unit
°C/W
°C/W
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Value
4
360
Unit
A
mJ
DS12937 - Rev 1
page 2/13


Features STF33N60DM6 Datasheet N-channel 600 V, 1 15 mΩ typ., 25 A, MDmesh™ DM6 Power MOSFET in a TO‑220FP package 23 1 TO -220FP D(2) Features Order code VDS RDS(on) max. STF33N60DM6 600 V 128 mΩ • Fast-recovery body diode • Lower RDS(on) per area vs previous gene ration • Low gate charge, input capac itance and resistance • 100% avalanch e tested • Extremely high dv/dt rugge dness • Zener-protected ID 25 A App lications G(1) • Switching applicatio ns Description This high-voltage N-cha nnel Power MOSFET is part of the MDmesh ™ DM6 fastS(3) AM15572v1_no_tab recov ery diode series. Compared with the pre vious MDmesh fast generation, DM6 combi nes very low recovery charge (Qrr), rec overy time (trr) and excellent improvem ent in RDS(on) per area with one of the most effective switching behaviors ava ilable in the market for the most deman ding high-efficiency bridge topologies and ZVS phase-shift converters. Produc t status link STF33N60DM6 Product summary Order code STF33N60DM6 Marking 33N60DM6.
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