MTB040P04N3 Power MOSFET Datasheet

MTB040P04N3 Datasheet, PDF, Equivalent


Part Number

MTB040P04N3

Description

P-Channel Power MOSFET

Manufacture

CYStech

Total Page 9 Pages
Datasheet
Download MTB040P04N3 Datasheet


MTB040P04N3
CYStech Electronics Corp.
Spec. No. : C967N3
Issued Date : 2017.11.02
Revised Date :
Page No. : 1/ 9
P-Channel Enhancement Mode MOSFET
MTB040P04N3
BVDSS
ID@TA=25C, VGS=-10V
RDSON@VGS=-10V, ID=-2.5A
RDSON@VGS=-4.5V, ID=-2A
-40V
-3.2A
47mΩ (typ.)
57mΩ (typ.)
Features
Advanced trench process technology
Super high density cell design for extremely low on resistance
Reliable and rugged
Compact and low profile SOT-23 package
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB040P04N3
Outline
SOT-23
D
GGate
SSource
DDrain
S
G
Ordering Information
Device
MTB040P04N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7reel
Product rank, zero for no rank products
Product name
MTB040P04N3
CYStek Product Specification

MTB040P04N3
CYStech Electronics Corp.
Spec. No. : C967N3
Issued Date : 2017.11.02
Revised Date :
Page No. : 2/ 9
Absolute Maximum Ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS -40
VGS ±20 V
Continuous Drain Current @TA=25C, VGS=-4.5V (Note 1)
Continuous Drain Current @TA=70C, VGS=-4.5V (Note 1)
ID
-3.2
-2.6 A
Pulsed Drain Current
(Note 2)
IDM
-30
Maximum Power Dissipation (Note 1)
PD 1.25 W
Linear Derating Factor
Operating Junction and Storage Temperature
Tj, Tstg
0.01
-55~+150
W/C
C
Note : 1. Surface mounted on 1 in²copper pad of FR-4 board, t5s; 270C/W when mounted on minimum copper pad.
2. Pulse width limited by maximum junction temperature.
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient, max (Note)
Thermal Resistance, Junction-to-Case, max
Symbol
RθJA
RθJC
Limit
100
50
Unit
C/W
Note : Surface mounted on 1 in²copper pad of FR-4 board, t5s ; 270C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25C, unless otherwise specified)
Symbol
Static
BVDSS
ΔBVDSS/ΔTj
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
Min.
-40
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.02
-
-
-
-
47
57
7.4
929
79
60
6.8
17
88.6
29.2
Max. Unit
Test Conditions
-
-
-2.5
±100
-1
-10
62
75
-
V
V/C
V
nA
µA
m
S
VGS=0V, ID=-250µA
Reference to 25C, ID=-1mA
VDS=VGS, ID=-250µA
VGS=±20V, VDS=0V
VDS=-32V, VGS=0V
VDS=-32V, VGS=0V, Tj=70C
ID=-2.5A, VGS=-10V
ID=-2A, VGS=-4.5V
VDS=-10V, ID=-3A
-
- pF VDS=-20V, VGS=0V, f=1MHz
-
-
-
-
ns VDS=-20V, ID=-2.5A, VGS=-10V, RG=6Ω
-
MTB040P04N3
CYStek Product Specification


Features CYStech Electronics Corp. Spec. No. : C 967N3 Issued Date : 2017.11.02 Revised Date : Page No. : 1/ 9 P-Channel Enhan cement Mode MOSFET MTB040P04N3 BVDSS I D@TA=25C, VGS=-10V RDSON@VGS=-10V, I D=-2.5A RDSON@VGS=-4.5V, ID=-2A -40V - 3.2A 47mΩ (typ.) 57mΩ (typ.) Feature s • Advanced trench process technolog y • Super high density cell design fo r extremely low on resistance • Relia ble and rugged • Compact and low prof ile SOT-23 package • Pb-free lead pla ting and halogen-free package Equivale nt Circuit MTB040P04N3 Outline SOT-23 D G:Gate S:Source D:Drain S G Ordering Information Device MTB040P04 N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shi pping 3000 pcs / tape & reel Environme nt friendly grade : S for RoHS complian t products, G for RoHS compliant and gr een compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Prod uct rank, zero for no rank products Pro duct name MTB040P04N3 CYStek Product Specification CYStech Electronics Corp. Spec.
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