MTB050N15BRQ8 Power MOSFET Datasheet

MTB050N15BRQ8 Datasheet, PDF, Equivalent


Part Number

MTB050N15BRQ8

Description

N-Channel Power MOSFET

Manufacture

CYStech

Total Page 9 Pages
Datasheet
Download MTB050N15BRQ8 Datasheet


MTB050N15BRQ8
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB050N15BRQ8
Spec. No. : C033Q8
Issued Date : 2018.03.07
Revised Date :
Page No. : 1/9
Features
Simple drive requirement
Low on-resistance
Fast switching characteristic
Pb-free & halogen-free package
BVDSS
ID @ TA=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=4.5A
RDS(ON)@VGS=4.5V, ID=3.3A
150V
4.9A
46.5 mΩ(typ)
52 mΩ(typ)
Symbol
MTB050N15BRQ8
Outline
SOP-8
DDDD
GGate DDrain SSource
Pin 1
G
SSS
Ordering Information
Device
MTB050N15BRQ8-0-T3-G
Package
SOP-8
(RoHS compliant & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB050N15BRQ8
CYStek Product Specification

MTB050N15BRQ8
CYStech Electronics Corp.
Spec. No. : C033Q8
Issued Date : 2018.03.07
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=16A, VDD=25V
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TA=25 °C
TA=70 °C
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Operating Junction and Storage Temperature
Tj, Tstg
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
*3. 100% tested by conditions of L=0.1mH, IAS=4.5A, VGS=10V, VDD=25V
Limits
150
±20
6.2
3.9
4.9
3.9
20 *1
32
128 *3
1.6 *2
3.1
2.0
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient (Note)
RθJC
RθJA
25
40
°C/W
Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t10s; 125°C/W when mounted on minimum pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
150 -
1-
-
2.5
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
GFS
- 12.6
-
S VDS =10V, ID=5A
IGSS - - ±100 nA VGS=±20V, VDS=0V
IDSS
--
--
1
10
μA
VDS =120V, VGS =0V
VDS =120V, VGS =0V, Tj=85°C
*RDS(ON)
- 46.5
- 52
62
72
mΩ
VGS =10V, ID=4.5A
VGS =4.5V, ID=3.3A
Dynamic
Qg *1, 2
- 24.5
37
Qgs *1, 2
- 3.9
-
nC VDS=75V, ID=2A, VGS=10V
Qgd *1, 2
- 4.7
-
Ciss - 1376 2064
Coss
- 65
98
pF VDS=75V, VGS=0V, f=1MHz
Crss
- 12
24
MTB050N15BRQ8
CYStek Product Specification


Features CYStech Electronics Corp. N-Channel Enha ncement Mode Power MOSFET MTB050N15BRQ8 Spec. No. : C033Q8 Issued Date : 2018 .03.07 Revised Date : Page No. : 1/9 F eatures • Simple drive requirement Low on-resistance • Fast switching characteristic • Pb-free & halogen-fr ee package BVDSS ID @ TA=25°C, VGS=10 V RDS(ON)@VGS=10V, ID=4.5A RDS(ON)@VGS= 4.5V, ID=3.3A 150V 4.9A 46.5 mΩ(typ) 52 mΩ(typ) Symbol MTB050N15BRQ8 Outl ine SOP-8 DDDD G:Gate D:Drain S: Source Pin 1 G SSS Ordering Informat ion Device MTB050N15BRQ8-0-T3-G Packa ge SOP-8 (RoHS compliant & Halogen-free package) Shipping 2500 pcs / Tape & R eel Environment friendly grade : S for RoHS compliant products, G for RoHS co mpliant and green compound products Pac king spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no r ank products Product name MTB050N15BR Q8 CYStek Product Specification CYSte ch Electronics Corp. Spec. No. : C033Q 8 Issued Date : 2018.03.07 Revised Date : Page No. : 2/9 Absolute Maximum Ratings.
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