N-Channel FET. 55N03L Datasheet


55N03L FET. Datasheet pdf. Equivalent


Part Number

55N03L

Description

N-Channel FET

Manufacture

ETC

Total Page 5 Pages
Datasheet
Download 55N03L Datasheet


55N03L
55N03L
S eptember , 2002
N-Channel Logic Level E nhancement Mode Field E ffect Transistor
4 P R ODUC T S UMMAR Y
F E AT UR E S
VDS S
30V
ID R DS (on) ( m W ) T Y P
12.5 @ VGS = 10V
55A
20 @ VGS = 4.5V
S uper high dense cell design for extremely low R DS (ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
GS
S DB S E R IE S
T O -263(DD-P AK )
G
D
S
S DP S E R IE S
TO-220
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
S ymbol
VDS
VGS
Limit
30
20
Drain C urrent-C ontinuous @ TJ=125 C
-P ulsed a
ID
IDM
55
140
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation @ Tc=25 C
Derate above 25 C
Operating and S torage Temperature R ange
IS
PD
TJ, TSTG
55
75
0.5
-65 to 175
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
2.5
Thermal R esistance, Junction-to-Ambient
R JA
62.5
1
Unit
V
V
A
A
A
W
W/ C
C
C /W
C /W

55N03L
55N03L
E LE CTR ICAL CHAR ACTE R IS TICS (TC =25 C unless otherwise noted)
4 Parameter
S ymbol Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS a
BVDSS VGS =0V, ID =250uA
30
IDSS VDS =24V, VGS =0V
IGSS VGS = 16V, VDS =0V
V
10 uA
100 nA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = 250uA 1 1.5 3 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS = 10V, ID = 27A
VGS = 4.5V, ID = 22A
12.5 14 m ohm
20 23 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS b
ID(ON)
gFS
VGS = 10V, VDS = 10V
VDS = 10V, ID = 27A
60
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS b
VDS =15V, VGS = 0V
f =1.0MHZ
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON) VDD = 15V,
tr
ID = 1A,
VGS = 10V,
tD(O F F )
R GEN =60 ohm
Fall Time
tf
Total Gate Charge
Qg VDS=15V, ID=27.5A,VGS=10V
VDS=15V, ID=27.5A,VGS=4.5V
Gate-S ource Charge
Gate-Drain Charge
Qgs VDS =15V, ID = 27.5A,
Qgd VGS =10V
A
32 S
930 PF
340 PF
120 PF
17 16 ns
23 250 ns
37 90 ns
20 200 ns
26.1 35 nC
13.7 16.5 nC
5.4 nC
4.6 nC
2


Features 55N03L S eptember , 2002 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y F E AT UR E S VDS S 30V ID R DS (on) ( m W ) T Y P 12.5 @ VGS = 10V 55A 20 @ VG S = 4.5V S uper high dense cell design for extremely low R DS (ON). High powe r and current handling capability. TO-2 20 & TO-263 package. D GS S DB S E R I E S T O -263(DD-P AK ) G D S S DP S E R IE S TO-220 D G S ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise no ted) P arameter Drain-S ource Voltage Gate-S ource Voltage S ymbol VDS VGS Limit 30 20 Drain C urrent-C ontinuous @ TJ=125 C -P ulsed a ID IDM 55 140 Drain-S ource Diode Forward C urrent M aximum P ower Dissipation @ Tc=25 C Der ate above 25 C Operating and S torage T emperature R ange IS PD TJ, TSTG 55 7 5 0.5 -65 to 175 THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction -to-C ase R JC 2.5 Thermal R esistan ce, Junction-to-Ambient R JA 62.5 1 Unit V V A A A W W/ C C C /W C /W 55N03L E LE CTR ICAL CHAR .
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