SFP70N06

Features � 70A,60V, RDS(on)(Max0.014Ω)@VGS=10V � Ultra-low Gate charge(Typical 70nC) � Low Crss (Typical 160pF) � Improved dv/dt capability � 100%Avalanche Tested � Maximum Junction Temperature Range(175℃) SFP70N06 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Semiwell's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics,DC-DC Converters and power management in portable and,battery operated products. Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ,Tstg Junction and Storage Temperature Maximum Lead Temperature for soldering purpose, TL 1/8 form Case for 5 seconds Thermal Characteristics Symbol Parameter RQJC RQCS RQJA Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient (Note1) (Note2) (Note3) Value 60 70 51 280 ±25 800 7.0 158 1.05 -55~175 300 Units V A A A V mJ V/ ns W W/℃ ℃ ℃ Value Min Typ Max - - 0.95 - 0.5 - - 62.5 Units ℃/W ℃/W ℃/W Rev.A Oct.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserve...