SFP70N06 N-Channel MOSFET Datasheet

SFP70N06 Datasheet, PDF, Equivalent


Part Number

SFP70N06

Description

Silicon N-Channel MOSFET

Manufacture

WINSEMI

Total Page 7 Pages
Datasheet
Download SFP70N06 Datasheet


SFP70N06
Features
70A,60V, RDS(on)(Max0.014Ω)@VGS=10V
Ultra-low Gate charge(Typical 70nC)
Low Crss (Typical 160pF)
Improved dv/dt capability
100%Avalanche Tested
Maximum Junction Temperature Range(175℃)
SFP70N06
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Semiwell's advanced
planar stripe,DMOS technology.This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics,DC-DC Converters and power
management in portable and,battery operated products.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
Maximum Lead Temperature for soldering purpose,
TL
1/8 form Case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
(Note3)
Value
60
70
51
280
±25
800
7.0
158
1.05
-55~175
300
Units
V
A
A
A
V
mJ
V/ ns
W
W/
Value
Min Typ Max
- - 0.95
- 0.5 -
- - 62.5
Units
/W
/W
/W
Rev.A Oct.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

SFP70N06
Electrical Characteristics(Tc=25)
SFP70N06
Characteristics
Symbol Test Condition Min Type Max Unit
Gate leakage current
IGSS VGS=±25V,VDS=0V
- - ±100 nA
Drain cut -off current
IDSS VDS=60V,VGS=0V
- - 1 µA
Drain -source breakdown voltage
Breakdown voltage Temperature
Coefficient
V(BR)DSS
BVDSS/
TJ
ID=250 µA,VGS=0V
ID=250µA,Referenced
to 25
60 -
- 0.066
-
-
V
V/
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2.0 -
4.0 V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=35A
-
-
0.014
Input capacitance
Reverse transfer capacitance
Output capacitance
Ciss
Crss
Coss
VDS=25V,
VGS=0V,
f=1MHz
- 2350 3050
-
160 200
pF
- 690 890
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
tr VDD=30V,
- 60 130
ton ID=35A
tf RG=50Ω
- 30 70
ns
- 95 200
toff
(Note4,5) -
125 260
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
Qg
Qgs
Qgd
VDS=48V,
VGS=10V,
ID=70A
(Note4,5)
-
-
-
70 90
nC
18 -
24 -
Source-Drain Ratings and Characteristics(Ta=25)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
IDR
Integral Reverse p-n Junction
-
Pulse drain reverse current
IDRP Diode in the MOSFET
-
- 70 A
- 280 A
Forward voltage(diode)
VDSF
IDR=70A,VGS=0V
- - 1.5 V
Reverse recovery time
trr IDR=70A,VGS=0V,
- 62 - ns
Reverse recovery charge
Qrr dIDR / dt =100 A / µs
- 110 - µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=250uH IAS=70A,VDD=25V,RG=0Ω,Starting TJ=25
3.ISD≤70A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
Steady, keep you advance
2/7


Features Features � 70A,60V, RDS(on)(Max0.014 )@VGS=10V � Ultra-low Gate charge(Ty pical 70nC) � Low Crss (Typical 160pF ) � Improved dv/dt capability � 100 %Avalanche Tested � Maximum Junction Temperature Range(175℃) SFP70N06 Sil icon N-Channel MOSFET General Descript ion This Power MOSFET is produced using Semiwell's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on -state resistance, have a low gate char ge with superior switching performance, and rugged avalanche characteristics,D C-DC Converters and power management in portable and,battery operated products . Absolute Maximum Ratings Symbol Pa rameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Con tinuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Sourc e Voltage EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv / dt Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ,Tstg Junction and Storage Temperature Maximum Lead.
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