Silicon N-Channel MOSFET
WFP840
Silicon N-Channel MOSFET
Features
■ 8A,500V,RDS(on)(Max 0.8Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 59nC) ■ Fa...
Description
WFP840
Silicon N-Channel MOSFET
Features
■ 8A,500V,RDS(on)(Max 0.8Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 59nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a Electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
ID Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
PD Derating Factor above 25℃
TJ, Tstg
Junction and Storage Temperature
TL Channel Temperature
*Drain current limited by junction temperature
(Note1)
(Note 2) (Note 1) (Note 3)
Value 500
8 5.1 32 ±30 320 13.4 3.5 134 1.0 -55~150 300
Thermal Characteristics
Symbol
Parameter
RQJC RQCS RQJA
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Min -
Value Typ
0.5
-
Max 0.93
62
Units V A A A V mJ mJ
V/ns W
W/℃ ℃ ℃
Units
℃/W ℃/W ℃/W
Rev.A Nov.2010
C...
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