N-Channel MOSFET. WFP840 Datasheet


WFP840 MOSFET. Datasheet pdf. Equivalent


Part Number

WFP840

Description

Silicon N-Channel MOSFET

Manufacture

Winsemi

Total Page 7 Pages
Datasheet
Download WFP840 Datasheet


WFP840
WFP840
Silicon N-Channel MOSFET
Features
■ 8A,500V,RDS(on)(Max 0.8Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 59nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150)
General Description
This Power MOSFET is produced using Winsemi ’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power factor
correction and half bridge and full bridge resonant topology line a
Electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25)
ID
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ, Tstg
Junction and Storage Temperature
TL Channel Temperature
*Drain current limited by junction temperature
(Note1)
(Note 2)
(Note 1)
(Note 3)
Value
500
8
5.1
32
±30
320
13.4
3.5
134
1.0
-55~150
300
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Min
-
-
-
Value
Typ
-
0.5
-
Max
0.93
-
62
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
Units
/W
/W
/W
Rev.A Nov.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

WFP840
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
IGSS VGS = ±30 V, VDS = 0 V
Gate−source breakdown voltage
V(BR)GSS
IG = ±10 μA, VDS = 0 V
Drain cut−off current
IDSS VDS = 400 V, VGS = 0 V
Drain−source breakdown voltage
Break Voltage Temperature
Coefficient
Gate threshold voltage
Drain−source ON resistance
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn−on time
Fall time
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
V(BR)DSS
ΔBVDSS/
ΔTJ
VGS(th)
RDS(ON)
gfs
Ciss
Crss
Coss
tr
ton
tf
toff
Qg
Qgs
Qgd
ID = 250 μA, VGS = 0 V
ID=250μA, Referenced to
25
VDS = 10 V, ID =250 μA
VGS = 10 V, ID = 4.0A
VDS = 40 V, ID = 4.0A
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD =250 V,
ID =8A
RG=9.1Ω
RD=31Ω
(Note4,5)
VDD = 400 V,
VGS = 10 V,
ID = 8 A
(Note4,5)
Min
-
±30
-
500
-
2
-
-
-
-
-
-
-
-
-
-
-
-
WFP840
Type
-
-
-
Max
±100
-
10
--
0.5 -
Unit
nA
V
μA
V
V/
-
-
7.3
1400
34
145
22
65
125
75
4
0.80
-
1800
44
190
55
140
260
160
V
Ω
S
pF
ns
59 70
nC
79
28 32
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
-
-
IDR = 8 A, VGS = 0 V
IDR = 8 A, VGS = 0 V,
dIDR / dt = 100 A / μs
Min
-
-
-
-
-
Type
-
-
-
390
4.2
Max
8
32
1.4
-
-
Unit
A
A
V
ns
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=9mH,IAS=8A,VDD=50V,RG=25Ω,Starting TJ=25
3.ISD≤8A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
Steady, keep you advance
2 /7


Features WFP840 Silicon N-Channel MOSFET Feature s ■ 8A,500V,RDS(on)(Max 0.8Ω)@VGS=10 V ■ Ultra-low Gate Charge(Typical 59n C) ■ Fast Switching Capability ■ 10 0%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Des cription This Power MOSFET is produced using Winsemi ’s advanced planar stri pe, DMOS technology. This latest techno logy has been especially designed to mi nimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for h igh efficiency switch model power suppl ies, power factor correction and half b ridge and full bridge resonant topology line a Electronic lamp ballast. Absol ute Maximum Ratings Symbol Parameter VDSS Drain Source Voltage Continuous Drain Current(@Tc=25℃) ID Continuous Drain Current(@Tc=100℃) IDM Drain C urrent Pulsed VGS Gate to Source Volta ge EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) PD Derating Factor a.
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