N-Channel MOSFET. WFF2N65B Datasheet


WFF2N65B MOSFET. Datasheet pdf. Equivalent


Part Number

WFF2N65B

Description

Silicon N-Channel MOSFET

Manufacture

Winsemi

Total Page 7 Pages
Datasheet
Download WFF2N65B Datasheet


WFF2N65B
Features
2A,650V(Type),RDS(on)(Max 5Ω)@VGS=10V
Ultra-low Gate Charge(Typical 9.0nC)
Fast Switching Capability
100%Avalanche Tested
Isolation Voltage(VISO=4000V AC)
Maximum Junction Temperature Range(150℃)
WFF2N65B
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch mode power supply .
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
TL Maximum lead Temperature for soldering purposes
*Drain current limited by maximum junction temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
650
2*
1.3*
16*
±30
240
10
4.5
20
0.26
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
Value
Min Typ
--
0.5 -
--
Rev.A Apr.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Max
6.25
-
62.5
Units
/W
/W
/W

WFF2N65B
Electrical Characteristics(Tc=25)
WFF2N65B
Characteristics
Symbol Test Condition Min Type Max Unit
Gate leakage current
IGSS VGS=±30V,VDS=0V
- - ±100 nA
Gate-source breakdown voltage
V(BR)GSS IG=±10 µA,VDS=0V
±30 -
-V
Drain cut -off current
VDS=600V,VGS=0V
IDSS
VDS=480V,Tc=125
- - 10 µA
- 100 µA
Drain -source breakdown voltage
Break Voltage Temperature
Coefficient
V(BR)DSS
BVDSS/
TJ
ID=250 µA,VGS=0V
ID=250µA,Referenced
to 25
650 -
0.65
-
-
V
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2 - 4V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=1A
- 4.2 5 Ω
Forward Transconductance
gfs VDS=50V,ID=1A
- 2.05 -
S
Input capacitance
Reverse transfer capacitance
Output capacitance
Ciss
Crss
Coss
VDS=25V,
VGS=0V,
f=1MHz
- 190 230
- 1.8 2.1 pF
- 15 20
Turn-on Rise time
tr VDD=300V,
-
Turn-on delay time ton ID=2A
Switching time
Turn-off Fall time
tf RG=25Ω
-
-
Turn-off delay time
toff
(Note4,5) -
23 45
7 23
ns
24 46
22 43
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
VDD=320V,
Qg
VGS=10V,
-
Qgs ID=2A
-
Qgd (Note4,5) -
9.0 19
nC
1.7 -
7.2 -
Source-Drain Ratings and Characteristics(Ta=25)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
IDR
- - - 2A
Pulse drain reverse current
IDRP
- - - 6A
Forward voltage(diode)
VDSF
IDR=2A,VGS=0V
- - 1.4 V
Reverse recovery time
Reverse recovery charge
trr IDR=2A,VGS=0V,
Qrr dIDR / dt =100 A / µs
- 200 - ns
- 1.3 - µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=0.5mH IAS=2.0A,VDD=50V,RG=0Ω ,Starting TJ=25
3.ISD≤2.0A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
Steady, keep you advance
2/7


Features Features � 2A,650V(Type),RDS(on)(Max 5 Ω)@VGS=10V � Ultra-low Gate Charge( Typical 9.0nC) � Fast Switching Capab ility � 100%Avalanche Tested � Isol ation Voltage(VISO=4000V AC) � Maximu m Junction Temperature Range(150℃) W FF2N65B Silicon N-Channel MOSFET Gener al Description This Power MOSFET is pro duced using Winsemi's advanced planar s tripe,VDMOS technology. This latest tec hnology has been especially designed to minimize on -state resistance,have a h igh rugged avalanche characteristics. T his devices is specially well suited fo r high efficiency switch mode power sup ply . Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Volt age Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to S ource Voltage EAS Single Pulsed Avalan che Energy EAR Repetitive Avalanche En ergy dv/dt Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ,Tstg Junction and Storage Temperature TL Maximum lea.
Keywords WFF2N65B, datasheet, pdf, Winsemi, Silicon, N-Channel, MOSFET, FF2N65B, F2N65B, 2N65B, WFF2N65, WFF2N6, WFF2N, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)