Features
� 2A,650V(Type),RDS(on)(Max 5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 9.0nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(VISO=4000V AC) � Maximum Junction Temperature Range(150℃)
WFF2N65B
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. ...
