N-Channel MOSFET. WFW24N50W Datasheet


WFW24N50W MOSFET. Datasheet pdf. Equivalent


Part Number

WFW24N50W

Description

Silicon N-Channel MOSFET

Manufacture

Winsemi

Total Page 7 Pages
Datasheet
Download WFW24N50W Datasheet


WFW24N50W
Features
24A,500V,RDS(on)(Max0.19Ω)@VGS=10V
Ultra-low Gate charge(Typical 90nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
WFW24N50W
Silicon N-Channel MOSFET
General Description
This N-Channel enhancement mode power field effect transistors
are produced using Winsemi's proprietary, planar stripe ,DMOS
technology. This advanced technology has been especially tailored
to minimize on-state resistance , provide superior switching
performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high
efficiency switch mode power supplies.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM
VGS
EAS
EAR
dv/dt
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
500
24
15.2
96
±30
1100
29
4.5
290
2.33
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
- - 0.43 /W
- 0.24
- /W
- - 40 /W
Rev.A Aug.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

WFW24N50W
Electrical Characteristics(Tc=25)
Characteristics
Symbol
Test Condition
Gate leakage current
Gate-source breakdown voltage
Drain cut -off current
IGSS
V(BR)GSS
IDSS
VGS=±25V,VDS=0V
IG=±10 µA,VDS=0V
VDS=500V,VGS=0V
VDS=400V,Tc=125
Drain -source breakdown voltage
Breakdown voltage Temperature
coefficient
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
V(BR)DSS
BVDSS/
TJ
VGS(th)
RDS(ON)
gfs
Ciss
Crss
Coss
tr
ton
tf
toff
ID=10 mA,VGS=0V
ID=250µA,Referenced
to 25
VDS=10V,ID=1mA
VGS=10V,ID=9A
VDS=40V,ID=9A
VDS=25V,
VGS=0V,
f=1MHz
VDD=250V,
ID=18A
RG=25Ω
(Note4,5)
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
Qg
Qgs
Qgd
VDD=400V,
VGS=10V,
ID=18A
(Note4,5)
WFW24N50W
Min Type Max Unit
- - ±100 nA
±30 -
-V
- - 1 µA
10
500 -
-V
- 0.53
- V/
3.0 - 5.0 V
-
0.16 0.19
- 22 - S
- 3500 4500
- 55 70 pF
- 520 670
- 250 500
- 80 170
ns
- 155 320
- 200 400
- 90 120
nC
- 23 -
- 44 -
Source-Drain Ratings and Characteristics(Ta=25)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Reverse recovery time
Reverse recovery charge
IDR
IDRP
VDSF
trr
Qrr
-
-
IDR=24A,VGS=0V
IDR=24A,VGS=0V,
dIDR / dt =100 A / µs
- - 24 A
- - 96 A
- - 1.4 V
- 400 - ns
- 4.3 - µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=3.4mH IAS=24A,VDD=50V,RG=25Ω,Starting TJ=25
3.ISD≤24A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
Steady, keep you advance
2/7


Features Features ■ 24A,500V,RDS(on)(Max0.19Ω )@VGS=10V ■ Ultra-low Gate charge(Typ ical 90nC) ■ Fast Switching Capabilit y ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) WFW 24N50W Silicon N-Channel MOSFET Genera l Description This N-Channel enhancemen t mode power field effect transistors a re produced using Winsemi's proprietary , planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistan ce , provide superior switching perform ance, and withstand high energy pulse i n the avalanche and commutation mode. T hese devices are well suited for high e fficiency switch mode power supplies. Absolute Maximum Ratings Symbol Param eter VDSS ID Drain Source Voltage Con tinuous Drain Current(@Tc=25℃) Contin uous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt Drain Current Pulsed Ga te to Source Voltage Single Pulsed Aval anche Energy Repetitive Avalanche Energ y Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) PD Derating Factor.
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