Junction Transistor. DK53TD Datasheet


DK53TD Transistor. Datasheet pdf. Equivalent


Part Number

DK53TD

Description

Bipolar Junction Transistor

Manufacture

Jingdao

Total Page 3 Pages
Datasheet
Download DK53TD Datasheet


DK53TD
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
DK53TD
Bipolar Junction Transistor
Si NPN
RoHS COMPLIANT
1.APPLICATION
Fluorescent LampElectronic Ballast
and Switch-mode power supplies
2.FEATURES
High voltage capability
Intergrated antiparallel collector-emitter diode
Features of good high temperature
High switching speed
3.PACKAGE
1 VD
TO-251
4.Electrical Characteristics
4.1 Absolute Maximum Ratings
1 Base(B) 2 Collector(C) 3 Emitter(E)
Tamb= 25unless specified
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Power Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25unless specified
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emittor Voltage
Emittor-Base Voltage
Collector-Base Cutoff Current
Collector-Emittor Cutoff Current
Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation Voltage
Base-Emittor Saturation Voltage
Rising Time
Falling Time
Storage Time
Typical Frequency
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE*
VCE
*
sat
VBE
*
sat
tr
tf
ts
fT
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
650
400
9
2.0
1.1
26
150
-55150
V
V
V
A
W
TEST CONDITION
IC=1mAIE=0
IC=1mAIB=0
IE=1mAIC=0
VCB=650V, IE=0
VCE=400V, IB=0
VEB=9V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=200mA
IC=1A, IB=0.5A
IC=1A, IB=0.5A
IC=250mA (UI9600)
VCE=20V,IC=20mA,
f=1MHz
VALUE
MIN TYP MAX
650
400
9
10
20
10
8
15 30
0.6
1.2
0.5
0.5
2.1 3.3
UNIT
V
V
V
μA
μA
μA
V
V
μs
μs
μs
5 MHz
*: Pulse test tp300μs,δ≤2%
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
1 2013

DK53TD
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
5. Characteristic Curve
Fig1 SOADC
4.0
Ta=25
1.0
30
24
18
DK53TD
Bipolar Junction Transistor
Fig2 PtotT
Ptot-Tc
0.1
0.01
1
10 100
VCE (V)
1000
Fig3 Static Characteristic
2
IB=100mA
Ta=25
12
6
Ptot-Ta
0
0 50 100
Tc ( ° C)
150
Fig4 hFE-IC
100
Ta=25
1
IB=20mA
IB=10mA
00 5
VCE (V)
Fig5 VCEsat-IC
10
Ta=25
IC/IB=2
1
10
0.1
10
VCE=5V
1
1mA 0.01
0.1
IC (A)
1
Fig6 VBEsat-IC
1.5
Ta=25
IC/IB=2
10
1.0
0.01
1mA 0.01
0.1
Ic (A)
1
10
0.5
1mA 0.01
0.1
Ic (A)
1
10
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
2 2013


Features R www.jdsemi.cn ShenZhen Jingdao Elect ronic Co.,Ltd. DK53TD Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIAN T 1.APPLICATION Fluorescent Lamp、E lectronic Ballast、 and Switch-mode po wer supplies 2.FEATURES High voltag e capability Intergrated antiparallel c ollector-emitter diode Features of good high temperature High switching speed 3.PACKAGE 1 VD TO-251 4.Electrica l Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emi tter(E) Tamb= 25℃ unless specified P ARAMETER SYMBOL VALUE UNIT Collecto r-Base Voltage Collector-Emittor Volta ge Emittor- Base Voltage Collector Cu rrent Power Dissipation Ta=25℃ Tc=2 5℃ Junction Temperature Storage Tem perature 4.2 Electrical Parameter Tamb = 25℃ unless specified PARAMETER SY MBOL Collector-Base Voltage Collector- Emittor Voltage Emittor-Base Voltage Co llector-Base Cutoff Current Collector-E mittor Cutoff Current Emittor-Base Cuto ff Current DC Current Gain Collector-Emittor Saturation Voltage Base-Emittor Saturation.
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