R
www.jdsemi.cn
ShenZhen Jingdao Electronic Co.,Ltd.
3866SF
Bipolar Junction Transistor
◆Si NPN ◆RoHS COMPLIANT
1.AP...
R
www.jdsemi.cn
ShenZhen Jingdao Electronic Co.,Ltd.
3866SF
Bipolar Junction
Transistor
◆Si
NPN ◆RoHS COMPLIANT
1.APPLICATION
Computer aided power and Switch-mode power supplies
2.FEATURES
High voltage capability Features of good high temperature High switching speed
3.PACKAGE
TO-220F
4.Electrical Characteristics
4.1 Absolute Maximum Ratings
1 Base(B) 2 Collector(C) 3 Emitter(E)
Tamb= 25℃ unless specified
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Power Dissipation
Ta=25℃ Tc=25℃
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25℃ unless specified
PARAMETER
SYMBOL
Collector-Base Voltage Collector-Emittor Voltage Emittor-Base Voltage Collector-Base Cutoff Current Collector-Emittor Cutoff Current Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation Voltage Base-Emittor Saturation Voltage Rising Time Falling Time Storage Time
Typical Frequency
BVCBO BVCEO BVEBO
ICBO ICEO IEBO
hFE*
VCE
* sat
VBE
* sat
tr
tf
ts
fT
VCBO VCEO VEBO
IC
Ptot
Tj Tstg
880 700 9 2.5 1.8 15 150 -55~150
V V V A
W
℃ ℃
TEST CONDITION
IC=1mA,IE=0 IC=1mA,IB=0 IE=1mA,IC=0 VCB=880V, IE=0 VCE=700V, IB=0 VEB=9V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=200mA IC=1A, IB=0.5A IC=1A, IB=0.5A
IC=250mA (UI9600)
VCE=10V,IC=100mA, f=1MHz
VALUE MIN TYP MAX 880 700
9 10 20 10
8 15 30
0.6 1.2 0.5 0.5 1.5 3.5
UNIT
V V V μA μA μA
V V μs μs μs
4 MHz
*: Pulse test tp≤300μs,δ≤2%
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