Junction Transistor. P13003 Datasheet


P13003 Transistor. Datasheet pdf. Equivalent


Part Number

P13003

Description

Bipolar Junction Transistor

Manufacture

Jingdao

Total Page 3 Pages
Datasheet
Download P13003 Datasheet


P13003
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
P13003
Bipolar Junction Transistor
Si NPN
RoHS COMPLIANT
1.APPLICATION
Fluorescent LampCharger
and Switch-mode power supplies
2.FEATURES
High voltage capability
Features of good high temperature
High switching speed
3.PACKAGE
TO-126D
4.Electrical Characteristics
4.1 Absolute Maximum Ratings
1 Base(B) 2 Collector(C) 3 Emitter(E)
Tamb= 25unless specified
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Power Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25unless specified
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emittor Voltage
Emittor-Base Voltage
Collector-Base Cutoff Current
Collector-Emittor Cutoff Current
Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation Voltage
Base-Emittor Saturation Voltage
Rising Time
Falling Time
Storage Time
Typical Frequency
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE*
VCE
*
sat
VBE
*
sat
tr
tf
ts
fT
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
700
400
9
1.0
1.25
12
150
-55150
V
V
V
A
W
TEST CONDITION
IC=1mAIE=0
IC=1mAIB=0
IE=1mAIC=0
VCB=700V, IE=0
VCE=400V, IB=0
VEB=9V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=100mA
IC=500mA, IB=250mA
IC=500mA, IB=250mA
IC=100mA (UI9600)
VCE=10V,IC=0.1A,
f=1MHz
VALUE
MIN TYP MAX
700
400
9
10
20
10
8
15 30
0.6
1.2
0.7
0.9
2.0 3.5
UNIT
V
V
V
μA
μA
μA
V
V
μs
μs
μs
5 MHz
*: Pulse test tp300μs,δ≤2%
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
1 2013

P13003
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
5. Characteristic Curve
Fig1 SOADC
1.0 Ta=25
15
12
0.1 9
P13003
Bipolar Junction Transistor
Fig2 PtotT
Ptot-Tc
0.01
0.001
1
10 100
VCE (V)
Fig3 Static Characteristic
1000
0.2
IB=10mA
Ta=25
6
3
Ptot-Ta
0
0 50 100
Tc ( C)
Fig4 hFE-IC
150
100
Ta=25
0.1
IB=2mA
IB=1mA
00 5
VCE (V)
Fig5 VCEsat-IC
10
Ta=25
IC/IB=2
1
10
0.1
10
VCE=5V
1
0.1mA 1mA
0.01
IC (A)
0.1
Fig6 VBEsat-IC
1.5
Ta=25
IC/IB=2
1
1
0.01
0.01
0.1
Ic (A)
1
0.5
0.01
0.1
Ic (A)
1
4
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
2 2013


Features R www.jdsemi.cn ShenZhen Jingdao Elect ronic Co.,Ltd. P13003 Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIAN T 1.APPLICATION Fluorescent Lamp、 Charger、 and Switch-mode power suppli es 2.FEATURES High voltage capabili ty Features of good high temperature Hi gh switching speed 3.PACKAGE TO-126 D 4.Electrical Characteristics 4.1 Ab solute Maximum Ratings 1 Base(B) 2 Col lector(C) 3 Emitter(E) Tamb= 25℃ unl ess specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collecto r-Emittor Voltage Emittor- Base Voltag e Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperatu re Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL Collector-Base Vol tage Collector-Emittor Voltage Emittor- Base Voltage Collector-Base Cutoff Curr ent Collector-Emittor Cutoff Current Em ittor-Base Cutoff Current DC Current Ga in Collector-Emittor Saturation Voltage Base-Emittor Saturation Voltage Rising Time Falling Time Storage Time Typical Frequenc.
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