Junction Transistor. 13007DL Datasheet


13007DL Transistor. Datasheet pdf. Equivalent


Part Number

13007DL

Description

Bipolar Junction Transistor

Manufacture

Jingdao

Total Page 3 Pages
Datasheet
Download 13007DL Datasheet


13007DL
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
13007DL
Bipolar Junction Transistor
Si NPN
RoHS COMPLIANT
1.APPLICATION
Mainly used for 110V power Fluorescent Lamp
Electronic Ballastetc
2.FEATURES
Intergrated antiparallel collector-emitter diode
Features of good high temperature
High switching speed
3.PACKAGE
1 VD
TO-220
4.Electrical Characteristics
4.1 Absolute Maximum Ratings
1 Base(B) 2 Collector(C) 3 Emitter(E)
Tamb= 25unless specified
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Power Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25unless specified
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emittor Voltage
Emittor-Base Voltage
Collector-Base Cutoff Current
Collector-Emittor Cutoff Current
Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation Voltage
Base-Emittor Saturation Voltage
Rising Time
Falling Time
Storage Time
Typical Frequency
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE*
VCE
*
sat
VBE
*
sat
tr
tf
ts
fT
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
400
200
9
12
2
80
150
-55150
V
V
V
A
W
TEST CONDITION
IC=1mAIE=0
IC=1mAIB=0
IE=1mAIC=0
VCB=400V, IE=0
VCE=200V, IB=0
VEB=9V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=2A
IC=8A, IB=1.6A
IC=8A, IB=1.6A
IC=500mA (UI9600)
VCE=10V,IC=0.5A,
f=1MHz
VALUE
MIN TYP MAX
400
200
9
10
20
10
8
15 30
1.0
1.5
1.0
0.5
2.0 6.0
UNIT
V
V
V
μA
μA
μA
V
V
μs
μs
μs
4 MHz
*: Pulse test tp300μs,δ≤2%
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
1 2013

13007DL
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
13007DL
Bipolar Junction Transistor
5. Characteristic Curve
Fig1 SOADC
20
10 Ta=25
1
0.1
1 10 100 1000
CE
Fig3 Static Characteristic
10
IB=1A
Ta=25
Fig2 PtotT
100
80
Ptot-Tc
60
40
20
Ptot-Ta
0
0 50 100 150
T ()
Fig4 hFE-IC
100
Ta=25
5
IB=200mA
IB=100mA
00 5
VCE (V)
Fig5 VCEsat-IC
10
Ta=25
IC/IB=2
1
10
10
VCE=5V
1
3mA 0.01 0.1
IC (A)
1
Fig6 VBEsat-IC
1.5
Ta=25
IC/IB=2
10 30
1
0.1
0.1
1
IC (A)
10 30
0.5
0.1
1
IC (A)
10 30
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
2 2013


Features R www.jdsemi.cn ShenZhen Jingdao Elect ronic Co.,Ltd. 13007DL Bipolar Junctio n Transistor ◆Si NPN ◆RoHS COMPLIA NT 1.APPLICATION Mainly used for 11 0V power Fluorescent Lamp、 Electronic Ballastetc 2.FEATURES Intergrated antiparallel collector-emitter diode Fe atures of good high temperature High sw itching speed 3.PACKAGE 1 VD TO-220 4.Electrical Characteristics 4.1 Abs olute Maximum Ratings 1 Base(B) 2 Coll ector(C) 3 Emitter(E) Tamb= 25℃ unle ss specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector -Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperatur e Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL Collector-Base Volt age Collector-Emittor Voltage Emittor-B ase Voltage Collector-Base Cutoff Curre nt Collector-Emittor Cutoff Current Emi ttor-Base Cutoff Current DC Current Gai n Collector-Emittor Saturation Voltage Base-Emittor Saturation Voltage Rising Time Fa.
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