BU103AH Junction Transistor Datasheet

BU103AH Datasheet, PDF, Equivalent


Part Number

BU103AH

Description

Bipolar Junction Transistor

Manufacture

Jingdao

Total Page 3 Pages
Datasheet
Download BU103AH Datasheet


BU103AH
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
BU103AH
Bipolar Junction Transistor
Si NPN
RoHS COMPLIANT
1.APPLICATION
Charger and Switch-mode power supplies
2.FEATURES
High voltage capability
Features of good high temperature
High switching speed
3.PACKAGE
TO-92
4.Electrical Characteristics
4.1 Absolute Maximum Ratings
Tamb= 25unless specified
PARAMETER
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Power Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25unless specified
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emittor Voltage
Emittor-Base Voltage
Collector-Base Cutoff Current
Collector-Emittor Cutoff Current
Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation Voltage
Base-Emittor Saturation Voltage
Rising Time
Falling Time
Storage Time
Typical Frequency
*: Pulse test tp300μs,δ≤2%
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE*
VCE
*
sat
VBE
*
sat
tr
tf
ts
fT
1 Emitter(E) 2 Collector(C) 3 Base(B)
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
VALUE
900
600
9
1.6
0.8
10
150
-55150
UNIT
V
V
V
A
W
TEST CONDITION
IC=1mA,IE=0
IC=1mA ,IB=0
IE=1mA,IC=0
VCB=900V, IE=0
VCE=600V, IB=0
VEB=9V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=200mA
IC=1A, IB=0.5A
IC=1A, IB=0.5A
IC=250mA (UI9600)
VCE=10V,IC=0.1A,
f=1MHz
VALUE
MIN TYP MAX
900
600
9
10
20
10
8
15 30
0.6
1.2
1.0
0.8
1.0 3.0
UNIT
V
V
V
μA
μA
μA
V
V
μs
5 MHz
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
1 2013

BU103AH
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
5. Characteristic Curve
Fig1 Static Characteristic
0.8
IB=40mA
Ta=25
100
BU103AH
Bipolar Junction Transistor
Fig2 hFE-IC
Ta=25
0.4
IB=8mA
IB=4mA
0
0
5
VCE (V)
Fig3 VCEsat-IC
10
Ta=25
IC/IB=2
1
10
0.1
0.01
0.1
Ic (A)
1.0
10
VCE=5V
1
1mA 0.01
0.1
IC (A)
1
Fig4 VBEsat-IC
1.5
Ta=25
IC/IB=2
1.0
10
0.5
0.1
Ic (A)
1.0
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
2 2013


Features R www.jdsemi.cn ShenZhen Jingdao Elect ronic Co.,Ltd. BU103AH Bipolar Junctio n Transistor ◆Si NPN ◆RoHS COMPLIA NT 1.APPLICATION Charger and Switch- mode power supplies 2.FEATURES High voltage capability Features of good hi gh temperature High switching speed 3 PACKAGE TO-92 4.Electrical Characte ristics 4.1 Absolute Maximum Ratings Tamb= 25℃ unless specified PARAMETER Collector-Base Voltage Collector-Emit tor Voltage Emittor- Base Voltage Col lector Current Power Dissipation Ta=25 ℃ Tc=25℃ Junction Temperature Sto rage Temperature 4.2 Electrical Parame ter Tamb= 25℃ unless specified PARAM ETER SYMBOL Collector-Base Voltage Co llector-Emittor Voltage Emittor-Base Vo ltage Collector-Base Cutoff Current Col lector-Emittor Cutoff Current Emittor-B ase Cutoff Current DC Current Gain Coll ector-Emittor Saturation Voltage Base-E mittor Saturation Voltage Rising Time F alling Time Storage Time Typical Freque ncy *: Pulse test tp≤300μs,δ≤2% BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE* VCE * sat.
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