Junction Transistor. BU3150F-A Datasheet


BU3150F-A Transistor. Datasheet pdf. Equivalent


Part Number

BU3150F-A

Description

Bipolar Junction Transistor

Manufacture

Jingdao

Total Page 3 Pages
Datasheet
Download BU3150F-A Datasheet


BU3150F-A
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
BU3150F-A
Bipolar Junction Transistor
Si NPN
RoHS COMPLIANT
1.APPLICATION
ChargerComputer aided power
and Switch-mode power supplies
2.FEATURES
High voltage capability
Features of good high temperature
High switching speed
3.PACKAGE
TO-126F
4.Electrical Characteristics
4.1 Absolute Maximum Ratings
1 Base(B) 2 Collector(C) 3 Emitter(E)
Tamb= 25unless specified
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Power Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25unless specified
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emittor Voltage
Emittor-Base Voltage
Collector-Base Cutoff Current
Collector-Emittor Cutoff Current
Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation Voltage
Base-Emittor Saturation Voltage
Rising Time
Falling Time
Storage Time
Typical Frequency
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE*
VCE
*
sat
VBE
*
sat
tr
tf
ts
fT
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
1400
800
9
1.5
1.25
20
150
-55150
V
V
V
A
W
TEST CONDITION
IC=1mAIE=0
IC=1mAIB=0
IE=1mAIC=0
VCB=1400V, IE=0
VCE=800V, IB=0
VEB=9V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=100mA
IC=1A, IB=0.5A
IC=1A, IB=0.5A
IC=500mA (UI9600)
VCE=20V,IC=20mA,
f=1MHz
VALUE
MIN TYP MAX
1400
800
9
10
20
10
8
15 30
0.6
1.2
3.0
3.0
1.5 3.5
UNIT
V
V
V
μA
μA
μA
V
V
μs
μs
μs
5 MHz
*: Pulse test tp300μs,δ≤2%
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
1 2013

BU3150F-A
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
5. Characteristic Curve
Fig1 SOADC
BU3150F-A
Bipolar Junction Transistor
Fig2 PtotT
Ta=25
Ptot-Tc
1.0 16
12
0.1
0.01
1
10 100
VCE (V)
1000
Fig3 Static Characteristic
8
4
Ptot-Ta
0
0 50 100
Tc ( ° C)
Fig4 hFE-IC
150
IB=1A
Ta=25
Ta=25
0.3
0.1
00
IB=200mA
IB=100mA
5
VCE (V)
Fig5 VCEsat-IC
10
Ta=25
IC/IB=2
1
10
0.1
10
VCE=5V
1
1mA 0.01
0.1
IC (A)
Fig6 VBEsat-IC
1.5
Ta=25
IC/IB=2
1
10
1.0
0.01
0.01
0.1
Ic (A)
1
5
0.5
0.01
0.1
Ic (A)
1
5
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
2 2013


Features R www.jdsemi.cn ShenZhen Jingdao Elect ronic Co.,Ltd. BU3150F-A Bipolar Junct ion Transistor ◆Si NPN ◆RoHS COMPL IANT 1.APPLICATION Charger、Comput er aided power、 and Switch-mode power supplies 2.FEATURES High voltage c apability Features of good high tempera ture High switching speed 3.PACKAGE TO-126F 4.Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B ) 2 Collector(C) 3 Emitter(E) Tamb= 25 ℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage C ollector-Emittor Voltage Emittor- Base Voltage Collector Current Power Diss ipation Ta=25℃ Tc=25℃ Junction Te mperature Storage Temperature 4.2 Ele ctrical Parameter Tamb= 25℃ unless sp ecified PARAMETER SYMBOL Collector-B ase Voltage Collector-Emittor Voltage E mittor-Base Voltage Collector-Base Cuto ff Current Collector-Emittor Cutoff Cur rent Emittor-Base Cutoff Current DC Cur rent Gain Collector-Emittor Saturation Voltage Base-Emittor Saturation Voltage Rising Time Falling Time Storage Time Typical F.
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