H13003AD Junction Transistor Datasheet

H13003AD Datasheet, PDF, Equivalent


Part Number

H13003AD

Description

Bipolar Junction Transistor

Manufacture

Jingdao

Total Page 3 Pages
Datasheet
Download H13003AD Datasheet


H13003AD
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
H13003AD
Bipolar Junction Transistor
Si NPN
RoHS COMPLIANT
1.APPLICATION
Fluorescent LampElectronic Ballast
and Switch-mode power supplies
2.FEATURES
High voltage capability
Intergrated antiparallel collector-emitter diode
Features of good high temperature
High switching speed
3.PACKAGE
1 VD
TO-826
4.Electrical Characteristics
4.1 Absolute Maximum Ratings
1 Base(B) 2 Collector(C) 3 Emitter(E)
Tamb= 25unless specified
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Power Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25unless specified
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emittor Voltage
Emittor-Base Voltage
Collector-Base Cutoff Current
Collector-Emittor Cutoff Current
Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation Voltage
Base-Emittor Saturation Voltage
Rising Time
Falling Time
Storage Time
Typical Frequency
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE*
VCE
*
sat
VBE
*
sat
tr
tf
ts
fT
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
700
400
9
2.3
1.25
28
150
-55150
V
V
V
A
W
TEST CONDITION
IC=1mAIE=0
IC=1mAIB=0
IE=1mAIC=0
VCB=700V, IE=0
VCE=400V, IB=0
VEB=9V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=500mA
IC=1A, IB=0.5A
IC=1A, IB=0.5A
IC=250mA (UI9600)
VCE=10V,IC=100mA,
f=1MHz
VALUE
MIN TYP MAX
700
400
9
10
20
10
8
15 30
0.6
1.2
0.8
0.8
2.3 3.5
UNIT
V
V
V
μA
μA
μA
V
V
μs
μs
μs
5 MHz
*: Pulse test tp300μs,δ≤2%
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
1 2013

H13003AD
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
5. Characteristic Curve
Fig1 SOADC
10
Ta=25
1.0
30
24
18
H13003AD
Bipolar Junction Transistor
Fig2 PtotT
Ptot-Tc
0.1
0.01
1
10 100
VCE (V)
1000
Fig3 Static Characteristic
2
IB=100mA
Ta=25
12
6
Ptot-Ta
0
0 50 100
Tc ( C)
Fig4 hFE-IC
150
100
Ta=25
1
IB=20mA
IB=10mA
00 5
VCE (V)
Fig5 VCEsat-IC
10
Ta=25
IC/IB=2
1
10
0.1
10
VCE=5V
1
1mA 0.01
0.1
IC (A)
1
Fig6 VBEsat-IC
1.5
Ta=25
IC/IB=2
10
1.0
0.01
0.1
1
Ic (A)
0.5
5 0.1
1
Ic (A)
5
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
2 2013


Features R www.jdsemi.cn ShenZhen Jingdao Elect ronic Co.,Ltd. H13003AD Bipolar Juncti on Transistor ◆Si NPN ◆RoHS COMPLI ANT 1.APPLICATION Fluorescent Lamp Electronic Ballast、 and Switch-mode power supplies 2.FEATURES High volt age capability Intergrated antiparallel collector-emitter diode Features of go od high temperature High switching spee d 3.PACKAGE 1 VD TO-826 4.Electri cal Characteristics 4.1 Absolute Maximu m Ratings 1 Base(B) 2 Collector(C) 3 E mitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collec tor-Base Voltage Collector-Emittor Vol tage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc =25℃ Junction Temperature Storage T emperature 4.2 Electrical Parameter Ta mb= 25℃ unless specified PARAMETER SYMBOL Collector-Base Voltage Collecto r-Emittor Voltage Emittor-Base Voltage Collector-Base Cutoff Current Collector -Emittor Cutoff Current Emittor-Base Cu toff Current DC Current Gain Collector-Emittor Saturation Voltage Base-Emittor Saturati.
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