Junction Transistor. P13009 Datasheet


P13009 Transistor. Datasheet pdf. Equivalent


Part Number

P13009

Description

Bipolar Junction Transistor

Manufacture

Jingdao

Total Page 3 Pages
Datasheet
Download P13009 Datasheet


P13009
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
P13009
Bipolar Junction Transistor
Si NPN
RoHS COMPLIANT
1.APPLICATION
Fluorescent LampElectronic Ballast
Computer Switch Power Supply
2.FEATURES
High voltage capability
Features of good high temperature
High switching speed
3.PACKAGE
1
2
3
TO-3PB
4.Electrical Characteristics
4.1 Absolute Maximum Ratings
1 Base(B) 2 Collector(C) 3 Emitter(E)
Tamb= 25unless specified
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Power Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25unless specified
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emittor Voltage
Emittor-Base Voltage
Collector-Base Cutoff Current
Collector-Emittor Cutoff Current
Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation Voltage
Base-Emittor Saturation Voltage
Rising Time
Falling Time
Storage Time
Typical Frequency
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE*
VCE
*
sat
VBE
*
sat
tr
tf
ts
fT
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
700
400
9
12
3
120
150
-55150
V
V
V
A
W
TEST CONDITION
IC=1mAIE=0
IC=1mAIB=0
IE=1mAIC=0
VCB=700V, IE=0
VCE=400V, IB=0
VEB=9V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=3A
IC=8A, IB=4A
IC=8A, IB=4A
IC=500mA (UI9600)
VCE=10V,IC=0.5A,
f=1MHz
VALUE
MIN TYP MAX
700
400
9
10
20
10
8
15 40
0.8
1.4
0.4
0.10 0.4
4.0 7.0
UNIT
V
V
V
μA
μA
μA
V
V
μs
μs
μs
4 MHz
*: Pulse test tp300μs,δ≤2%
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
1 2013

P13009
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
5. Characteristic Curve
Fig1 SOADC
20
10 Ta=25
125
100
P13009
Bipolar Junction Transistor
Fig2 PtotT
Ptot-Tc
1
0.1
1 10 100 1000
VCE (V)
Fig3 Static Characteristic
10
IB=500mA
Ta=25
75
50
25
Ptot-Ta
0
0 50 100
T ()
Fig4 hFE-IC
150
Ta=25
5
IB=100mA
IB=50mA
00 5
VCE (V)
Fig5 VCEsat-IC
Ta=25
IC/IB=2
1
0.1
10
VCE=5V
1
10 3mA 0.01 0.1 1 10 30
IC (A)
Fig6 VBEsat-IC
Ta=25
IC/IB=2
1.0
0.01
0.1
1 10
Ic (A)
50
0.5
0.1
1 10
Ic (A)
50
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
2 2013


Features R www.jdsemi.cn ShenZhen Jingdao Elect ronic Co.,Ltd. P13009 Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIAN T 1.APPLICATION Fluorescent Lamp、 Electronic Ballast、 Computer Switch P ower Supply 2.FEATURES High voltage capability Features of good high tempe rature High switching speed 3.PACKAGE 1 2 3 TO-3PB 4.Electrical Characte ristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) T amb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Vol tage Collector-Emittor Voltage Emitto r- Base Voltage Collector Current Pow er Dissipation Ta=25℃ Tc=25℃ Junc tion Temperature Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ un less specified PARAMETER SYMBOL Coll ector-Base Voltage Collector-Emittor Vo ltage Emittor-Base Voltage Collector-Ba se Cutoff Current Collector-Emittor Cut off Current Emittor-Base Cutoff Current DC Current Gain Collector-Emittor Satu ration Voltage Base-Emittor Saturation Voltage Rising Time Falling Time Storage Time Ty.
Keywords P13009, datasheet, pdf, Jingdao, Bipolar, Junction, Transistor, 13009, 3009, 009, P1300, P130, P13, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)