DatasheetsPDF.com

Junction Transistor. 13007T Datasheet

DatasheetsPDF.com

Junction Transistor. 13007T Datasheet
















13007T Transistor. Datasheet pdf. Equivalent













Part

13007T

Description

Bipolar Junction Transistor



Feature


R www.jdsemi.cn ShenZhen Jingdao Elect ronic Co.,Ltd. 13007T Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIAN T 1.APPLICATION Fluorescent Lamp、 Electronic Ballast、 Computer Switch P ower Supply 2.FEATURES High voltage capability Features of good high tempe rature High switching speed 3.PACKAG E TO-220 4.Electrical Characteristic s 4.1 Absolute Maximum Ratings 1 .
Manufacture

Jingdao

Datasheet
Download 13007T Datasheet


Jingdao 13007T

13007T; Base(B) 2 Collector(C) 3 Emitter(E) Tam b= 25℃ unless specified PARAMETER SY MBOL VALUE UNIT Collector-Base Volta ge Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Juncti on Temperature Storage Temperature 4. 2 Electrical Parameter Tamb= 25℃ unle ss specified PARAMETER Collector-Base Voltage Collector-Emittor.


Jingdao 13007T

Voltage Emittor-Base Voltage Collector- Base Cutoff Current Collector-Emittor C utoff Current Emittor-Base Cutoff Curre nt DC Current Gain Collector-Emittor Saturation Voltage Base-Emittor Saturat ion Voltage Rising Time Falling Time St orage Time Typical Frequency VCBO VCEO VEBO IC Ptot Tj Tstg 700 400 9 8 2 80 150 -55~150 V V V A W ℃ ℃ SYMB OL BVCBO BVCEO BVEBO IC.


Jingdao 13007T

BO ICEO IEBO hFE* VCE * sat VBE * s at tr tf ts fT TEST CONDITION IC=1 mA,IE=0 IC=1mA,IB=0 IE=1mA,IC=0 V CB=700V, IE=0 VCE=400V, IB=0 VEB=9V, IC =0 VCE=5V, IC=1mA VCE=5V, IC=2A IC=5A, IB=2.5A IC=5A, IB=2.5A IC=500mA (UI9600 ) VCE=10V,IC=0.5A, f=1MHz VALUE MIN TY P MAX 700 400 9 10 20 10 8 20 35 0.8 1. 4 0.5 0.23 0.5 3.0 5.0 UNIT V V V μA μA μA V V μs μs μs 5 MHz.





Part

13007T

Description

Bipolar Junction Transistor



Feature


R www.jdsemi.cn ShenZhen Jingdao Elect ronic Co.,Ltd. 13007T Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIAN T 1.APPLICATION Fluorescent Lamp、 Electronic Ballast、 Computer Switch P ower Supply 2.FEATURES High voltage capability Features of good high tempe rature High switching speed 3.PACKAG E TO-220 4.Electrical Characteristic s 4.1 Absolute Maximum Ratings 1 .
Manufacture

Jingdao

Datasheet
Download 13007T Datasheet




 13007T
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
13007T
Bipolar Junction Transistor
Si NPN
RoHS COMPLIANT
1.APPLICATION
Fluorescent LampElectronic Ballast
Computer Switch Power Supply
2.FEATURES
High voltage capability
Features of good high temperature
High switching speed
3.PACKAGE
TO-220
4.Electrical Characteristics
4.1 Absolute Maximum Ratings
1 Base(B) 2 Collector(C) 3 Emitter(E)
Tamb= 25unless specified
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Power Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25unless specified
PARAMETER
Collector-Base Voltage
Collector-Emittor Voltage
Emittor-Base Voltage
Collector-Base Cutoff Current
Collector-Emittor Cutoff Current
Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation Voltage
Base-Emittor Saturation Voltage
Rising Time
Falling Time
Storage Time
Typical Frequency
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
700
400
9
8
2
80
150
-55150
V
V
V
A
W
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE*
VCE
*
sat
VBE
*
sat
tr
tf
ts
fT
TEST CONDITION
IC=1mAIE=0
IC=1mAIB=0
IE=1mAIC=0
VCB=700V, IE=0
VCE=400V, IB=0
VEB=9V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=2A
IC=5A, IB=2.5A
IC=5A, IB=2.5A
IC=500mA (UI9600)
VCE=10V,IC=0.5A,
f=1MHz
VALUE
MIN TYP MAX
700
400
9
10
20
10
8
20 35
0.8
1.4
0.5
0.23 0.5
3.0 5.0
UNIT
V
V
V
μA
μA
μA
V
V
μs
μs
μs
5 MHz
*: Pulse test tp300μs,δ≤2%
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
1 2013




 13007T
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
5. Characteristic Curve
Fig1 SOADC
10 100
Ta=25
80
1.0
60
13007T
Bipolar Junction Transistor
Fig2 PtotT
Ptot-Tc
0.1
0.01
1
5
10 100
VCE (V)
1000
Fig3 Static Characteristic
IB=200mA
Ta=25
40
20
Ptot-Ta
0
0 50 100
Tc ( C)
150
Fig4 hFE-IC
100
Ta=25
2.5
IB=40mA
IB=20mA
00 5
VCE (V)
Fig5 VCEsat-IC
10
Ta=25
IC/IB=2
1
10
0.1
10
1 VCE=5V
3mA 0.01
0.1
IC (A)
1
Fig6 VBEsat-IC
1.5
Ta=25
IC/IB=2
1.0
10 30
0.01
0.1
1
Ic (A)
10
50
0.5
0.1
1
Ic (A)
10
50
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
2 2013




 13007T
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
6.Package Dimentions(Unitmm)
TO-220
13007T
Bipolar Junction Transistor
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
3 2013




Recommended third-party 13007T Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)