13007T Junction Transistor Datasheet

13007T Datasheet, PDF, Equivalent


Part Number

13007T

Description

Bipolar Junction Transistor

Manufacture

Jingdao

Total Page 3 Pages
Datasheet
Download 13007T Datasheet


13007T
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
13007T
Bipolar Junction Transistor
Si NPN
RoHS COMPLIANT
1.APPLICATION
Fluorescent LampElectronic Ballast
Computer Switch Power Supply
2.FEATURES
High voltage capability
Features of good high temperature
High switching speed
3.PACKAGE
TO-220
4.Electrical Characteristics
4.1 Absolute Maximum Ratings
1 Base(B) 2 Collector(C) 3 Emitter(E)
Tamb= 25unless specified
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Power Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25unless specified
PARAMETER
Collector-Base Voltage
Collector-Emittor Voltage
Emittor-Base Voltage
Collector-Base Cutoff Current
Collector-Emittor Cutoff Current
Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation Voltage
Base-Emittor Saturation Voltage
Rising Time
Falling Time
Storage Time
Typical Frequency
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
700
400
9
8
2
80
150
-55150
V
V
V
A
W
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE*
VCE
*
sat
VBE
*
sat
tr
tf
ts
fT
TEST CONDITION
IC=1mAIE=0
IC=1mAIB=0
IE=1mAIC=0
VCB=700V, IE=0
VCE=400V, IB=0
VEB=9V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=2A
IC=5A, IB=2.5A
IC=5A, IB=2.5A
IC=500mA (UI9600)
VCE=10V,IC=0.5A,
f=1MHz
VALUE
MIN TYP MAX
700
400
9
10
20
10
8
20 35
0.8
1.4
0.5
0.23 0.5
3.0 5.0
UNIT
V
V
V
μA
μA
μA
V
V
μs
μs
μs
5 MHz
*: Pulse test tp300μs,δ≤2%
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
1 2013

13007T
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
5. Characteristic Curve
Fig1 SOADC
10 100
Ta=25
80
1.0
60
13007T
Bipolar Junction Transistor
Fig2 PtotT
Ptot-Tc
0.1
0.01
1
5
10 100
VCE (V)
1000
Fig3 Static Characteristic
IB=200mA
Ta=25
40
20
Ptot-Ta
0
0 50 100
Tc ( C)
150
Fig4 hFE-IC
100
Ta=25
2.5
IB=40mA
IB=20mA
00 5
VCE (V)
Fig5 VCEsat-IC
10
Ta=25
IC/IB=2
1
10
0.1
10
1 VCE=5V
3mA 0.01
0.1
IC (A)
1
Fig6 VBEsat-IC
1.5
Ta=25
IC/IB=2
1.0
10 30
0.01
0.1
1
Ic (A)
10
50
0.5
0.1
1
Ic (A)
10
50
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
2 2013


Features R www.jdsemi.cn ShenZhen Jingdao Elect ronic Co.,Ltd. 13007T Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIAN T 1.APPLICATION Fluorescent Lamp、 Electronic Ballast、 Computer Switch P ower Supply 2.FEATURES High voltage capability Features of good high tempe rature High switching speed 3.PACKAG E TO-220 4.Electrical Characteristic s 4.1 Absolute Maximum Ratings 1 Base( B) 2 Collector(C) 3 Emitter(E) Tamb= 2 5℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Bas e Voltage Collector Current Power Dis sipation Ta=25℃ Tc=25℃ Junction T emperature Storage Temperature 4.2 El ectrical Parameter Tamb= 25℃ unless s pecified PARAMETER Collector-Base Vol tage Collector-Emittor Voltage Emittor- Base Voltage Collector-Base Cutoff Curr ent Collector-Emittor Cutoff Current Em ittor-Base Cutoff Current DC Current G ain Collector-Emittor Saturation Volta ge Base-Emittor Saturation Voltage Rising Time Falling Time Storage Time Typical Freque.
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