Junction Transistor. BU202DL Datasheet


BU202DL Transistor. Datasheet pdf. Equivalent


Part Number

BU202DL

Description

Bipolar Junction Transistor

Manufacture

Jingdao

Total Page 3 Pages
Datasheet
Download BU202DL Datasheet


BU202DL
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
BU202DL
Bipolar Junction Transistor
Si NPN
RoHS COMPLIANT
1.APPLICATION
Mainly used for 110V power Fluorescent Lamp
Electronic Ballastetc
2.FEATURES
Intergrated antiparallel collector-emitter diode
Features of good high temperature
High switching speed
3.PACKAGE
1 VD
TO-92
4.Electrical Characteristics
4.1 Absolute Maximum Ratings
1 Base(B) 2 Collector(C) 3 Emitter(E)
Tamb= 25unless specified
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Power Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25unless specified
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
400
200
9
1.5
0.8
15
150
-55150
V
V
V
A
W
VALUE
TEST CONDITION
UNIT
MIN TYP MAX
Collector-Base Voltage
Collector-Emittor Voltage
Emittor-Base Voltage
Collector-Base Cutoff Current
Collector-Emittor Cutoff Current
Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation Voltage
Base-Emittor Saturation Voltage
Rising Time
Falling Time
Storage Time
Typical Frequency
*: Pulse test tp300μs,δ≤2%
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE*
VCE
*
sat
VBE
*
sat
tr
tf
ts
fT
IC=1mA,IE=0
IC=1mA ,IB=0
IE=1mA,IC=0
VCB=400V, IE=0
VCE=200V, IB=0
VEB=9V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=200mA
IC=1A, IB=0.5A
IC=1A, IB=0.5A
400
200
9
8
15
IC=250mA (UI9600)
VCE=10V,IC=0.1A,
f=1MHz
1.3
5
V
V
V
10 μA
20 μA
10 μA
30
0.6 V
1.2 V
0.7
0.9 μs
2.3
MHz
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
1 2013

BU202DL
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
5. Characteristic Curve
Fig1 Static Characteristic
2.0
IB=100mA
Ta=25
100
BU202DL
Bipolar Junction Transistor
Fig2 hFE-IC
Ta=25
1.0
IB=20mA
IB=10mA
0
0
5
VCE (V)
Fig3 VCEsat-IC
10
Ta=25
IC/IB=2
1
10
0.1
0.01
0.1
1
Ic (A)
5
10
VCE=5V
1
1mA 0.01
0.1
IC (A)
1
10
Fig4 VBEsat-IC
1.5
Ta=25
IC/IB=2
1.0
0.5
0.1
1
Ic (A)
5
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
2 2013


Features R www.jdsemi.cn ShenZhen Jingdao Elect ronic Co.,Ltd. BU202DL Bipolar Junctio n Transistor ◆Si NPN ◆RoHS COMPLIA NT 1.APPLICATION Mainly used for 11 0V power Fluorescent Lamp、 Electronic Ballastetc 2.FEATURES Intergrated antiparallel collector-emitter diode Fe atures of good high temperature High sw itching speed 3.PACKAGE 1 VD TO-92 4.Electrical Characteristics 4.1 Abso lute Maximum Ratings 1 Base(B) 2 Colle ctor(C) 3 Emitter(E) Tamb= 25℃ unles s specified PARAMETER SYMBOL VALUE U NIT Collector-Base Voltage Collector- Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.2 Electrical P arameter Tamb= 25℃ unless specified PARAMETER SYMBOL VCBO VCEO VEBO IC Pt ot Tj Tstg 400 200 9 1.5 0.8 15 150 -5 5~150 V V V A W ℃ ℃ VALUE TEST CONDITION UNIT MIN TYP MAX Collecto r-Base Voltage Collector-Emittor Voltag e Emittor-Base Voltage Collector-Base Cutoff Current Collector-Emittor Cutoff Current Emitt.
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