POWER MOSFET. CM4N65C Datasheet


CM4N65C MOSFET. Datasheet pdf. Equivalent


Part Number

CM4N65C

Description

POWER MOSFET

Manufacture

Jingdao

Total Page 4 Pages
Datasheet
Download CM4N65C Datasheet


CM4N65C
R
ShenZhen Jingdao Electronic Co.,Ltd.
650V N-Channel VDMOS
RoHS
POWER MOSFET
l
l
TO-251/252
TO-251
TO-252
Tamb= 25
-
(Ta=25 )
Tamb= 25
VDSS
ID
IDM
VGS
EAS
RθJC
Ptot
Tj
Tstg
650
4
16
30
128
3.57
35
150
-55 150
V
A
A
V
mJ
/W
W
BVDSS
RDSON*
VGS TH
IDSS
IGSS
VSD*
td(off)
Ciss
tP 300us,
L=10mH ID=4A TJ= 25
2%
VGS=0V ID=250 A
VGS=10V ID=2A
VDS=VGS ID=250 A
VDS=650V VGS=0V
VGS= ± 30V
IS=4A VGS=0V
VDD=250V ID=4A
RG=25Ω VGS=10V
VGS=0V VDS=25V
f=1.0MHZ
650
2
2
50
470
3 0755-29799516
V
2.5 Ω
4V
25 A
10 A
1.5 V
ns
pF
0755-29799515
1 2013

CM4N65C
R
ShenZhen Jingdao Electronic Co.,Ltd.
POWER MOSFET
RDSON
Tc=25
TJ=Max Rated
VDS(V)
Ptot-Tc
Ptot-Ta
Tc (° C)
0
VGS (V)
Tj C
Tj (° C)
3
2 2013
Tc (° C)
0755-29799516
0755-29799515


Features R ShenZhen Jingdao Electronic Co.,Ltd. 6 50V N-Channel VDMOS RoHS POWER MOSFET l l TO-251/252 TO-251 TO-252 Tamb= 25 - (Ta=25 ) Tamb= 25 VDSS ID IDM VGS EAS RθJC Ptot Tj Tstg 650 4 16 30 12 8 3.57 35 150 -55 150 V A A V mJ /W W BVDSS RDSON* VGS TH IDSS IGSS VSD* td( off) Ciss tP 300us, L=10mH ID=4A TJ= 25 2% VGS=0V ID=250 A VGS=10V ID=2A V DS=VGS ID=250 A VDS=650V VGS=0V VGS= ± 30V IS=4A VGS=0V VDD=250V ID=4A RG=25 VGS=10V VGS=0V VDS=25V f=1.0MHZ 650 2 2 50 470 3 0755-29799516 V 2.5 Ω 4 V 25 A 10 A 1.5 V ns pF 0755-29799515 1 2013 R ShenZhen Jingdao Electronic C o.,Ltd. POWER MOSFET RDSON Tc=25 TJ= Max Rated VDS(V) Ptot (W) Ptot-Tc Pt ot-Ta Tc (° C) – Rdson ( ) ID (A) D DSS 0 VGS (V) Tj C ID Tj (° C) 3 2 2013 Tc (° C) 0755-29799516 075 5-29799515 R ShenZhen Jingdao Electron ic Co.,Ltd. POWER MOSFET 3 3 2013 07 55-29799516 0755-29799515 R ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSF ET 3 4 2013 0755-29799516 0755-29799515 .
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