Junction Transistor. BU103DH Datasheet


BU103DH Transistor. Datasheet pdf. Equivalent


Part Number

BU103DH

Description

Bipolar Junction Transistor

Manufacture

Jingdao

Total Page 3 Pages
Datasheet
Download BU103DH Datasheet


BU103DH
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
BU103DH
Bipolar Junction Transistor
Si NPN
RoHS COMPLIANT
1.APPLICATION
Charger and Switch-mode power supplies
2.FEATURES
High voltage capability
Intergrated antiparallel collector-emitter diode
Features of good high temperature
High switching speed
3.PACKAGE
1 VD
TO-92
4.Electrical Characteristics
4.1 Absolute Maximum Ratings
1 Emitter(E) 2 Collector(C) 3 Base(B)
Tamb= 25unless specified
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Power Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25unless specified
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
800
500
9
1.6
0.8
13
150
-55150
V
V
V
A
W
TEST CONDITION
VALUE
UNIT
MIN TYP MAX
Collector-Base Voltage
Collector-Emittor Voltage
Emittor-Base Voltage
Collector-Base Cutoff Current
Collector-Emittor Cutoff Current
Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation Voltage
Base-Emittor Saturation Voltage
Rising Time
Falling Time
Storage Time
Typical Frequency
*: Pulse test tp300μs,δ≤2%
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE*
VCE
*
sat
VBE
*
sat
tr
tf
ts
fT
IC=1mA,IE=0
IC=1mA ,IB=0
IE=1mA,IC=0
VCB=800V, IE=0
VCE=500V, IB=0
VEB=9V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=200mA
IC=1A, IB=0.5A
IC=1A, IB=0.5A
800
500
9
8
20
IC=250mA (UI9600)
VCE=10V,IC=0.1A,
f=1MHz
1.5
5
V
V
V
10 μA
20 μA
10 μA
35
0.6 V
1.2 V
1.0
0.8 μs
3.5
MHz
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
1 2013

BU103DH
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
5. Characteristic Curve
BU103DH
Bipolar Junction Transistor
Fig1 Static Characteristic
1.0
IB=50mA
Ta=25
Fig2 hFE-IC
100
Ta=25
0.5
00
IB=10mA
IB=5mA
5
VCE (V)
10
Fig3 VCEsat-IC
10
Ta=25
IC/IB=2
1
0.1
0.01
0.04 0.1
1
Ic (A)
4
10
VCE=5V
1
1mA 0.01
0.1
IC (A)
1
10
Fig4 VBEsat-IC
1.5
Ta=25
IC/IB=2
1.0
0.5
0.1
1
Ic (A)
10
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
2 2013


Features R www.jdsemi.cn ShenZhen Jingdao Elect ronic Co.,Ltd. BU103DH Bipolar Junctio n Transistor ◆Si NPN ◆RoHS COMPLIA NT 1.APPLICATION Charger and Switch -mode power supplies 2.FEATURES Hig h voltage capability Intergrated antipa rallel collector-emitter diode Features of good high temperature High switchin g speed 3.PACKAGE 1 VD TO-92 4.El ectrical Characteristics 4.1 Absolute M aximum Ratings 1 Emitter(E) 2 Collecto r(C) 3 Base(B) Tamb= 25℃ unless spec ified PARAMETER SYMBOL VALUE UNIT C ollector-Base Voltage Collector-Emitto r Voltage Emittor- Base Voltage Colle ctor Current Power Dissipation Ta=25 Tc=25℃ Junction Temperature Stor age Temperature 4.2 Electrical Paramet er Tamb= 25℃ unless specified PARAME TER SYMBOL VCBO VCEO VEBO IC Ptot Tj Tstg 800 500 9 1.6 0.8 13 150 -55~15 0 V V V A W ℃ ℃ TEST CONDITION V ALUE UNIT MIN TYP MAX Collector-Base Voltage Collector-Emittor Voltage Emit tor-Base Voltage Collector-Base Cutoff Current Collector-Emittor Cutoff Current Emittor-B.
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