BU103DH

R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. BU103DH Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Charger and Switch-mode power supplies 2．FEATURES High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-92 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Emitter(E) 2 Collector(C) 3 Base(B) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL VCBO VCEO VEBO IC Ptot Tj Tstg 800 500 9 1.6 0.8 13 150 -55～150 V V V A W ℃ ℃ TEST CONDITION VALUE UNIT MIN TYP MAX Collector-Base Voltage Collector-Emittor Voltage Emittor-Base Voltage Collector-Base Cutoff Current Collector-Emittor Cutoff Current Emittor-Base Cutoff Current DC Current Gain Collector-Emittor Saturation Voltage Base-Emittor Saturation Voltage Rising Time Falling Time Storage Time Typical Frequency ＊: Pulse test tp≤300μs,δ≤2% BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE* VCE * sat VBE * sat tr tf ts fT IC=1mA,IE=0 IC=1mA ,IB=0 IE=1mA,IC=0 VCB=800V, IE=0 VCE=500V, IB=0 VEB=9V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=200mA IC=1A, IB=0.5A IC=1A, IB=0.5A 800 500 9 8 20 IC=250mA (UI9600) VCE=10V,IC=0.1A, f=1MHz 1.5 5 V V V 10 μA 20 μA 10 μ...