N-Channel MOSFET. FQP5N50 Datasheet


FQP5N50 MOSFET. Datasheet pdf. Equivalent


Part Number

FQP5N50

Description

5A N-Channel MOSFET

Manufacture

Oucan Semi

Total Page 6 Pages
Datasheet
Download FQP5N50 Datasheet


FQP5N50
FQP5N50/FQPF5N50
500V, 5A N-Channel MOSFET
General Description
Product Summary
The FQP5N50 & FQPF5N50 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
600V@150
5A
< 1.5
TO-220
Top View
TO-220F
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
FQP5N50
FQPF5N50
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
5 5*
3.3 3.3*
18
2.6
101
203
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
104 35.0
0.8 0.3
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
FQP5N50
65
0.5
FQPF5N50
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
1.2
3.6
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6

FQP5N50
FQP5N50/FQPF5N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=500V, VGS=0V
VDS=400V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=2.5A
gFS Forward Transconductance
VDS=40V, ID=2.5A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
500
600
V
0.55
V/ oC
1
µA
10
±100 nΑ
3.5 4.1 4.5
V
1.1 1.5
6S
0.75 1
V
5A
18 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
414 517 620
46 57 68
3.9 4.9 5.9
1.9 3.8 6
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=400V, ID=5A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=250V, ID=5A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=5A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=5A,dI/dt=100A/µs,VDS=100V
15.5
3.4
7.2
14.5
29
34.5
24
166
1.37
19
4
8.6
17.4
35
41.4
29
199
1.6
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=2.6A, VDD=150V, RG=25, Starting TJ=25°C
Page 2 of 6


Features FQP5N50/FQPF5N50 500V, 5A N-Channel MOSF ET General Description Product Summar y The FQP5N50 & FQPF5N50 have been fab ricated using an advanced high voltage MOSFET process that is designed to deli ver high levels of performance and robu stness in popular AC-DC applications. B y providing low RDS(on), Ciss and Crss along with guaranteed avalanche capabil ity these parts can be adopted quickly into new and existing offline power sup ply designs. VDS ID (at VGS=10V) RDS(O N) (at VGS=10V) 100% UIS Tested 100% Rg Tested 600V@150℃ 5A < 1.5Ω TO-22 0 Top View TO-220F D G S Absolute Maximum Ratings TA=25°C unless otherwi se noted Parameter Symbol FQP5N50 F QPF5N50 Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continu ous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Cur rent C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EA S dv/dt 5 5* 3.3 3.3* 18 2.6 101 203 5 TC=25°C Power Dissipation B De.
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