5A N-Channel MOSFET
FQP5N50/FQPF5N50
500V, 5A N-Channel MOSFET
General Description
Product Summary
The FQP5N50 & FQPF5N50 have been fabri...
Description
FQP5N50/FQPF5N50
500V, 5A N-Channel MOSFET
General Description
Product Summary
The FQP5N50 & FQPF5N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
600V@150℃ 5A < 1.5Ω
TO-220
Top View
TO-220F
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
FQP5N50
FQPF5N50
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS dv/dt
5 5* 3.3 3.3*
18 2.6 101 203
5
TC=25°C Power Dissipation B Derate above 25oC
PD
104 35.0 0.8 0.3
Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
-55 to 150 300
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RθJA RθCS
FQP5N50 65 0.5
FQPF5N50 65 --
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
1.2
3.6
Units V V
A
A mJ mJ V/ns W W/ oC °C
°C
Units °C/W °C/W °C/W
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