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FQPF22N50 Dataheets PDF



Part Number FQPF22N50
Manufacturers Oucan Semi
Logo Oucan Semi
Description 22A N-Channel MOSFET
Datasheet FQPF22N50 DatasheetFQPF22N50 Datasheet (PDF)

FQP22N50/FQPF22N50 500V,22A N-Channel MOSFET General Description Product Summary The FQP22N50 & FQPF22N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tes.

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FQP22N50/FQPF22N50 500V,22A N-Channel MOSFET General Description Product Summary The FQP22N50 & FQPF22N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 600V@150℃ 22A < 0.26Ω TO-220 Top View TO-220F D G S Orderable Part Number FQP22N50L FQPF22N50 Package Type TO220 Green TO-220F Pb Free Form Tube Tube Minimum Order Quantity 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol FQP22N50 Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 22 15 TC=25°C Power Dissipation B Derate above 25oC PD 417 3.3 Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS FQP22N50 65 0.5 Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. 0.3 FQB22N50 500 ±30 22* 15* 88 7 735 1470 5 50 0.4 -55 to 150 300 FQB22N50 65 -2.5 FQPF22N50 22* 15* 39 0.3 FQPF22N50 65 -3.2 Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=500V, VGS=0V VDS=400V, TJ=125°C IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±30V VDS=5V ID=250µA RDS(ON) gFS VSD Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS=10V, ID=11A VDS=40V, ID=11A IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=25V, f=1MHz Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=400V, ID=22A Qgd Gate Drain Charge tD(on) tr tD(off) Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=250V, ID=22A, RG=25Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=22A,dI/dt=100A/µs,VDS=100V Qrr Body Diode Reverse Recovery Charge IF=22A,dI/dt=100A/µs,VDS=100V 500 600 V 0.57 V/ oC 1 µA 10 ±100 nΑ 3.4 4 4.5 V 0.21 0.26 Ω 2.


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