N-Channel MOSFET. FQPF22N50 Datasheet


FQPF22N50 MOSFET. Datasheet pdf. Equivalent


Part Number

FQPF22N50

Description

22A N-Channel MOSFET

Manufacture

Oucan Semi

Total Page 6 Pages
Datasheet
Download FQPF22N50 Datasheet


FQPF22N50
FQP22N50/FQPF22N50
500V,22A N-Channel MOSFET
General Description
Product Summary
The FQP22N50 & FQPF22N50 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.By providing
low RDS(on), Ciss and Crss along with guaranteed avalanche
capability these parts can be adopted quickly into new and
existing offline power supply designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
600V@150
22A
< 0.26
TO-220
Top View
TO-220F
D
G
S
Orderable Part Number
FQP22N50L
FQPF22N50
Package Type
TO220 Green
TO-220F Pb Free
Form
Tube
Tube
Minimum Order Quantity
1000
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol FQP22N50
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
22
15
TC=25°C
Power Dissipation B Derate above 25oC
PD
417
3.3
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
FQP22N50
65
0.5
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.3
FQB22N50
500
±30
22*
15*
88
7
735
1470
5
50
0.4
-55 to 150
300
FQB22N50
65
--
2.5
FQPF22N50
22*
15*
39
0.3
FQPF22N50
65
--
3.2
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6

FQPF22N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
BVDSS
/∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=500V, VGS=0V
VDS=400V, TJ=125°C
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±30V
VDS=5V ID=250µA
RDS(ON)
gFS
VSD
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=10V, ID=11A
VDS=40V, ID=11A
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=400V, ID=22A
Qgd Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=250V, ID=22A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=22A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=22A,dI/dt=100A/µs,VDS=100V
500
600
V
0.57
V/ oC
1
µA
10
±100 nΑ
3.4 4 4.5 V
0.21 0.26
25 S
0.7 1
V
22 A
88 A
2465
200
14
0.7
3086
290
24
1.4
3710
380
35
2.1
pF
pF
pF
55 69 83
17 22 27
12 24 36
60
122
124
77
415 524 630
7.5 9.6 12
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=7A, VDD=150V, RG=25, Starting TJ=25°C
Page 2 of 6


Features FQP22N50/FQPF22N50 500V,22A N-Channel MO SFET General Description Product Summ ary The FQP22N50 & FQPF22N50 have been fabricated using an advanced high volt age MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC application s.By providing low RDS(on), Ciss and Cr ss along with guaranteed avalanche capa bility these parts can be adopted quick ly into new and existing offline power supply designs. VDS ID (at VGS=10V) RD S(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 600V@150℃ 22A < 0.26Ω TO-220 Top View TO-220F D G S Orde rable Part Number FQP22N50L FQPF22N50 Package Type TO220 Green TO-220F Pb Fre e Form Tube Tube Minimum Order Quanti ty 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parame ter Symbol FQP22N50 Drain-Source Volt age VDS Gate-Source Voltage VGS Con tinuous Drain TC=25°C Current TC=10 0°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche ene.
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