Document
FQP22N50/FQPF22N50
500V,22A N-Channel MOSFET
General Description
Product Summary
The FQP22N50 & FQPF22N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
600V@150℃ 22A < 0.26Ω
TO-220
Top View
TO-220F
D
G S
Orderable Part Number
FQP22N50L FQPF22N50
Package Type
TO220 Green TO-220F Pb Free
Form
Tube Tube
Minimum Order Quantity
1000 1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol FQP22N50
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS dv/dt
22 15
TC=25°C Power Dissipation B Derate above 25oC
PD
417 3.3
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds Thermal Characteristics
TL
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RθJA RθCS
FQP22N50 65 0.5
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.3
FQB22N50 500 ±30 22* 15* 88 7 735 1470 5 50 0.4
-55 to 150
300
FQB22N50 65 -2.5
FQPF22N50
22* 15*
39 0.3
FQPF22N50 65 -3.2
Units V V
A
A mJ mJ V/ns W W/ oC °C
°C
Units °C/W °C/W °C/W
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
BVDSS /∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=500V, VGS=0V VDS=400V, TJ=125°C
IGSS VGS(th)
Gate-Body leakage current Gate Threshold Voltage
VDS=0V, VGS=±30V VDS=5V ID=250µA
RDS(ON) gFS VSD
Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage
VGS=10V, ID=11A VDS=40V, ID=11A IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss Input Capacitance Coss Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge Qgs Gate Source Charge
VGS=10V, VDS=400V, ID=22A
Qgd Gate Drain Charge
tD(on) tr tD(off)
Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime
VGS=10V, VDS=250V, ID=22A, RG=25Ω
tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=22A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=22A,dI/dt=100A/µs,VDS=100V
500 600
V
0.57
V/ oC
1 µA
10
±100 nΑ
3.4 4 4.5 V
0.21 0.26 Ω
2.