FQPF10N65

FQP10N65/FQPF10N65 650V,10A N-Channel MOSFET General Description Product Summary The FQP10N65 & FQPF10N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 750V@150℃ 10A < 1Ω TO-220 Top View TO-220F D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol FQP10N65 FQPF10N65 Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 10 10* 6.2 6.2* 36 3.4 173 347 5 TC=25°C Power Dissipation B Derate above 25oC PD 250 50 2 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS FQP10N65 65 0.5 FQPF10N65 65 -- Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. 0.5 2.5 Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Page 1 of ...