FQPF10N65 N-Channel MOSFET Datasheet

FQPF10N65 Datasheet, PDF, Equivalent


Part Number

FQPF10N65

Description

10A N-Channel MOSFET

Manufacture

Oucan Semi

Total Page 6 Pages
Datasheet
Download FQPF10N65 Datasheet


FQPF10N65
FQP10N65/FQPF10N65
650V,10A N-Channel MOSFET
General Description
Product Summary
The FQP10N65 & FQPF10N65 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
750V@150
10A
< 1
TO-220
Top View
TO-220F
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
FQP10N65
FQPF10N65
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
10 10*
6.2 6.2*
36
3.4
173
347
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
250 50
2 0.4
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
FQP10N65
65
0.5
FQPF10N65
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.5
2.5
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6

FQPF10N65
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
BVDSS
/∆TJ
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=650V, VGS=0V
VDS=520V, TJ=125°C
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
RDS(ON)
gFS
VSD
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=10V, ID=5A
VDS=40V, ID=5A
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
650
750
0.75
1
10
±100
3 4 4.5
0.77 1
13
0.73 1
10
36
V
V/ oC
µA
nΑ
V
S
V
A
A
1095
95
8
1.7
1369
118
10
3.5
1645
145
12
5.5
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=520V, ID=10A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=325V, ID=10A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=10A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V
22 27.7 33
6 7.4 9
9 11.3 14
30
61
74
53
255 320 385
4.8 6 7.2
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with TA =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.4A, VDD=150V, RG=25, Starting TJ=25°C
Page 2 of 6


Features FQP10N65/FQPF10N65 650V,10A N-Channel MO SFET General Description Product Summ ary The FQP10N65 & FQPF10N65 have been fabricated using an advanced high volt age MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC application s. By providing low RDS(on), Ciss and C rss along with guaranteed avalanche cap ability these parts can be adopted quic kly into new and existing offline power supply designs. VDS ID (at VGS=10V) R DS(ON) (at VGS=10V) 100% UIS Tested 100 % Rg Tested 750V@150℃ 10A < 1Ω TO -220 Top View TO-220F D G S Absolu te Maximum Ratings TA=25°C unless othe rwise noted Parameter Symbol FQP10N6 5 FQPF10N65 Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Co ntinuous Drain TC=25°C Current TC=10 0°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G P eak diode recovery dv/dt ID IDM IAR EA R EAS dv/dt 10 10* 6.2 6.2* 36 3.4 173 347 5 TC=25°C Power Dissipatio.
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