N-Channel MOSFET. FQPF8N80 Datasheet


FQPF8N80 MOSFET. Datasheet pdf. Equivalent


Part Number

FQPF8N80

Description

7.4A N-Channel MOSFET

Manufacture

Oucan Semi

Total Page 6 Pages
Datasheet
Download FQPF8N80 Datasheet


FQPF8N80
FQP8N80/FQPF8N80
800V, 7.4A N-Channel MOSFET
General Description
Product Summary
The FQP8N80 & FQPF8N80 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.By providing
low RDS(on), Ciss and Crss along with guaranteed avalanche
capability these parts can be adopted quickly into new and
existing offline power supply designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-220F
900V@150
7.4A
< 1.63
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
Peak diode recovery dv/dt
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
FQP8N80
FQPF8N80
800
±30
7.4 7.4*
4.6 4.6*
26
3.8
217
433
5
245 50
2.0 0.4
-55 to 150
300
FQP8N80
65
0.5
0.51
FQPF8N80
65
--
2.5
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6

FQPF8N80
FQP8N80/FQPF8N80
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
800
900
V
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
0.86
V/ oC
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
ISM
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VDS=800V, VGS=0V
VDS=640V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
VGS=10V, ID=4A
VDS=40V, ID=4A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
1
µA
10
±100 nΑ
3.3 3.9 4.5
V
1.35 1.63
9S
0.72 1
V
7.4 A
26 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1100
70
6
1.7
1375
101
11
3.5
1650
132
16
5.3
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=640V, ID=8A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=8A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=8A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V
20 26 32
7.3
9.1
35
51
69
41
380 484 585
4.5 6 7.5
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.8A, VDD=150V, RG=25, Starting TJ=25°C
Page 2 of 6


Features FQP8N80/FQPF8N80 800V, 7.4A N-Channel MO SFET General Description Product Summ ary The FQP8N80 & FQPF8N80 have been f abricated using an advanced high voltag e MOSFET process that is designed to de liver high levels of performance and ro bustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capabi lity these parts can be adopted quickly into new and existing offline power su pply designs. VDS ID (at VGS=10V) RDS( ON) (at VGS=10V) 100% UIS Tested 100% R g Tested TO-220 Top View TO-220F 90 0V@150℃ 7.4A < 1.63Ω D G Absolute Maximum Ratings TA=25°C unless otherw ise noted Parameter Symbol Drain-Sou rce Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC =100°C Pulsed Drain Current C Avalan che Current C Repetitive avalanche ene rgy C Single pulsed avalanche energy G Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Diss ipation B Derate above 25oC PD Junction and Storage Temperature Range.
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