7A N-Channel MOSFET
FQP7N70/FQPF7N70
700V, 7A N-Channel MOSFET
General Description
Product Summary
The FQP7N70 & FQPF7N70 have been fabri...
Description
FQP7N70/FQPF7N70
700V, 7A N-Channel MOSFET
General Description
Product Summary
The FQP7N70 & FQPF7N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
TO-220
Top View
TO-220F
800V@150℃ 7A < 1.8Ω
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
FQP7N70
FQPF7N70
Drain-Source Voltage
VDS 700
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS
dv/dt
7 7* 4.2 4.2*
24 5 187 375 50 5
TC=25°C Power Dissipation B Derate above 25oC
PD
198 1.6
38.5 0.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds Thermal Characteristics
TL
300
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RθJA RθCS
FQP7N70 65 0.5
FQPF7N70 65 --
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.63
3.25
Units V V
A
A mJ mJ V/ns W W/ oC °C
°C
Unit...
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