FQP7N70 N-Channel MOSFET Datasheet

FQP7N70 Datasheet, PDF, Equivalent


Part Number

FQP7N70

Description

7A N-Channel MOSFET

Manufacture

Oucan Semi

Total Page 6 Pages
Datasheet
Download FQP7N70 Datasheet


FQP7N70
FQP7N70/FQPF7N70
700V, 7A N-Channel MOSFET
General Description
Product Summary
The FQP7N70 & FQPF7N70 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-220F
800V@150
7A
< 1.8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
FQP7N70
FQPF7N70
Drain-Source Voltage
VDS 700
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
7 7*
4.2 4.2*
24
5
187
375
50
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
198
1.6
38.5
0.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
FQP7N70
65
0.5
FQPF7N70
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.63
3.25
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6

FQP7N70
FQP7N70/FQPF7N70
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=700V, VGS=0V
VDS=560V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=3.5A
gFS Forward Transconductance
VDS=40V, ID=3.5A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
700
800
V
0.8 V/ oC
1
µA
10
±100 nΑ
3 4 4.5 V
1.48 1.8
6.7 S
0.76 1
V
7A
24 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
782 978 1175 pF
64 80 104 pF
5.5 7 10 pF
2 4 6
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=560V, ID=7A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=350V, ID=7A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=7A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=7A,dI/dt=100A/µs,VDS=100V
16 20.5 25
456
6.3 7.9 11.8
23
50
53
38
215 270 325
4.7 5.9 7.1
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=30mH, IAS=5A, VDD=150V, RG=25, Starting TJ=25°C
Page 2 of 6


Features FQP7N70/FQPF7N70 700V, 7A N-Channel MOSF ET General Description Product Summar y The FQP7N70 & FQPF7N70 have been fab ricated using an advanced high voltage MOSFET process that is designed to deli ver high levels of performance and robu stness in popular AC-DC applications. B y providing low RDS(on), Ciss and Crss along with guaranteed avalanche capabil ity these parts can be adopted quickly into new and existing offline power sup ply designs. VDS ID (at VGS=10V) RDS(O N) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 800 V@150℃ 7A < 1.8Ω D G S Absolute M aximum Ratings TA=25°C unless otherwis e noted Parameter Symbol FQP7N70 FQ PF7N70 Drain-Source Voltage VDS 700 Gate-Source Voltage VGS ±30 Continuo us Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Curr ent C Repetitive avalanche energy C S ingle plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 7 7* 4.2 4.2* 24 5 187 375 50 5 TC=25.
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