FQP12N60

FQP12N60/FQPF12N60 600V,12A N-Channel MOSFET General Description Product Summary The FQP12N60 & FQPF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 700V@150℃ 12A < 0.55Ω TO-220 Top View TO-220F D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol FQP12N60 FQPF12N60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 12 12* 9.7 9.7* 48 5.5 450 900 50 5 TC=25°C Power Dissipation B Derate above 25oC PD 278 2.2 50 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS FQP12N60 65 0.5 FQPF12N60 65 -- Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. 0.45 2.5 Units V V A A mJ mJ V/ns W W/ oC °C °...