N-Channel MOSFET. FQPF12N60 Datasheet


FQPF12N60 MOSFET. Datasheet pdf. Equivalent


Part Number

FQPF12N60

Description

12A N-Channel MOSFET

Manufacture

Oucan Semi

Total Page 6 Pages
Datasheet
Download FQPF12N60 Datasheet


FQPF12N60
FQP12N60/FQPF12N60
600V,12A N-Channel MOSFET
General Description
Product Summary
The FQP12N60 & FQPF12N60 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
700V@150
12A
< 0.55
TO-220
Top View
TO-220F
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
FQP12N60
FQPF12N60
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
12 12*
9.7 9.7*
48
5.5
450
900
50
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
278
2.2
50
0.4
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
FQP12N60
65
0.5
FQPF12N60
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.45
2.5
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6

FQPF12N60
FQP12N60/FQPF12N60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=6A
gFS Forward Transconductance
VDS=40V, ID=6A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
600
700
V
0.65
V/ oC
1
µA
10
±100 nΑ
3 4 4.5 V
0.46 0.55
20 S
0.72 1
V
12 A
48 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1400
130
10
2.5
1751
164
13
3.3
2100
200
16
5
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=12A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=300V, ID=12A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=12A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V
40
9
17.9
39
70
122
74
311
5.2
50
11
22
50
85
150
90
373
6.2
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=5.5A, VDD=150V, RG=25, Starting TJ=25°C
Page 2 of 6


Features FQP12N60/FQPF12N60 600V,12A N-Channel MO SFET General Description Product Summ ary The FQP12N60 & FQPF12N60 have been fabricated using an advanced high volt age MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC application s. By providing low RDS(on), Ciss and C rss along with guaranteed avalanche cap ability these parts can be adopted quic kly into new and existing offline power supply designs. VDS ID (at VGS=10V) R DS(ON) (at VGS=10V) 100% UIS Tested 100 % Rg Tested 700V@150℃ 12A < 0.55Ω TO-220 Top View TO-220F D S Absol ute Maximum Ratings TA=25°C unless oth erwise noted Parameter Symbol FQP12N 60 FQPF12N60 Drain-Source Voltage VD S 600 Gate-Source Voltage VGS ±30 C ontinuous Drain TC=25°C Current TC= 100°C Pulsed Drain Current C Avalanc he Current C Repetitive avalanche ener gy C Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode re covery dv/dt ID IDM IAR EAR EAS dv/dt 12 12* 9.7 9.7* 48 5.5 450 900 .
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