N-Channel MOSFET. FQD60N07 Datasheet


FQD60N07 MOSFET. Datasheet pdf. Equivalent


Part Number

FQD60N07

Description

60V N-Channel MOSFET

Manufacture

Oucan Semi

Total Page 6 Pages
Datasheet
Download FQD60N07 Datasheet


FQD60N07
FQ D 60N07
60V N-Channel MOSFET
General Description
The FQD60N07 used advanced trench technology to
provide excellent RDS(ON) and low gate charge. Those
devices are suitable for use as a load switch or in PWM
applications.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 5V)
60V
60A
< 18m
< 25m
100% UIS Tested
100% Rg Tested
Top View
D
TO252
DPAK
Bottom View
D
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
GG
Maximum
60
±20
60
30
80
7
5
30
45
60
30
2.1
1.3
-55 to 175
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
17.4
51
1.8
Max
25
60
2.5
Rev 0 : Aug 2011
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6

FQD60N07
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=48V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
VGS=4.5V, ID=30A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=20A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=1.5,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
2
Min
60
1.3
60
1535
108
70
0.3
38
20
4.8
8.5
Typ
1.8
15
31
20
65
0.7
1920
155
116
0.65
47.6
24.2
6
14.4
7.4
5.1
28.2
5.5
34
46
Max
1
5
100
2.3
20
37
25
1
32
2300
200
165
0.8
68
30
7
20
41
Units
V
µA
nA
V
A
m
m
S
V
A
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Rev 0 : Aug 2011
Page 2 of 6


Features FQ D 60N07 60V N-Channel MOSFET General Description The FQD60N07 used advanced trench technology to provide excellent RDS(ON) and low gate charge. Those dev ices are suitable for use as a load swi tch or in PWM applications. Product Su mmary VDS ID (at VGS=10V) RDS(ON) (at V GS=10V) RDS(ON) (at VGS = 5V) 60V 60A < 18mΩ < 25mΩ 100% UIS Tested 100% Rg Tested Top View D TO252 DPAK Bot tom View D D S G S Absolute Maximu m Ratings TA=25°C unless otherwise not ed Parameter Symbol Drain-Source Vol tage VDS Gate-Source Voltage VGS Co ntinuous Drain TC=25°C Current G TC =100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanch e energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=10 0°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Te mperature Range TJ, TSTG GG Maximum 6 0 ±20 60 30 80 7 5 30 45 60 30 2.1 1.3 -55 to 175 S Thermal Characteristics Parameter Maximum Junction-to-Ambient.
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